摘要
SiO_(2)磨料因其化学性质稳定及抛光后良好的表面平整度,作为关键磨料被广泛应用于化学机械抛光(CMP)。CMP后晶圆表面残留的颗粒物易引发划伤、击穿及短路等缺陷问题,严重削弱芯片的可靠性。基于SiO_(2)颗粒在Cu、Co和介质材料表面的吸附特性,综述了互连结构CMP后清洗技术和清洗液体系的原理、特点及研究现状。从颗粒清洗效率、表面质量、环境影响控制等多个维度对比了干法清洗和湿法清洗技术,分析了各类清洗技术的优势与局限性。此外,系统地探讨了pH调节剂、络合剂和表面活性剂等关键清洗液组分对颗粒去除的影响,从理论机制层面揭示了SiO_(2)磨料颗粒清洗所面临的核心挑战与解决方案;同时对未来互连结构CMP后清洗工艺的发展方向进行了前瞻性展望,旨在为后续研究提供有力的理论支撑与指导方向。
SiO_(2) abrasives are widely used as key abrasives in chemical mechanical polishing(CMP)due to their stable chemical properties and excellent surface flatness after polishing.However,the residual particles on the wafer surface after CMP are prone to cause defects such as scratches,breakdowns and short circuits,which significantly undermine the reliability of chips.Based on the adsorption characteristics of SiO_(2) particles on the surfaces of Cu,Co and dielectric materials,the principles,characteristics and current research status of post-CMP cleaning techniques and cleaning solution systems for interconnect structures are reviewed.The dry and wet cleaning technologies are compared with regards to particle cleaning efficiency,surface quality and environmental impact control.The advantages and limitations of each type of cleaning methods are analyzed.Additionally,the impacts of critical cleaning solution components,such as pH regulator,complexing agent and surfactant on particle removal performance are systematically explored,revealing the core challenges and solution strategies for cleaning SiO_(2) abrasive particles at the level of theoretical mechanisms.Meanwhile,the future development direction of post-CMP cleaning process for interconnect structures is prospected,with the aim of providing robust theoretical support and directional guidance for subsequent research endeavors.
作者
张力飞
路新春
闫妹
赵德文
Zhang Lifei;Lu Xinchun;Yan Mei;Zhao Dewen(Department of Mechanical Engineering,Tsinghua University,Beijing 100084,China;State Key Laboratory of Tribology in Advanced Equipment,Beijing 100084,China;Hwatsing Technology Company Limited,Tianjin 300350,China)
出处
《半导体技术》
北大核心
2025年第2期101-116,共16页
Semiconductor Technology
基金
国家自然科学基金(51991370,51991374)。
关键词
互连结构
化学机械抛光(CMP)后清洗
SiO_(2)颗粒
清洗技术
清洗液化学组分
interconnection structure
post-chemical mechanical polishing(CMP)cleaning
SiO_(2)particle
cleaning technique
chemical component in cleaning solution
作者简介
张力飞(1994-),女,天津人,博士,助理研究员,研究方向涵盖微纳制造摩擦学、纳米及原子级精度表面制造、先进制程集成电路化学机械抛光及后清洗等;通信作者:路新春(1966-),男,山东烟台人,博士,首席研究员,研究方向涵盖微纳制造摩擦学、纳米及原子级精度表面制造、先进制程集成电路化学机械抛光等。
