摘要
本文讨论了采用反馈法的优点,对应用反馈技术使微波低噪声FET放大器同时获得最佳噪声和最小驻波问题进行了研究分析,讨论了放大器的设计,给出了计算和实验结果。在7.6～9GHz下,两级放大器增益18dB,噪声系数小于2.4dB,输入驻波小于2.1。
This paper discusses advantages of the feedback method and analyses how to optimize both noise figure and VSWR of microwave low-noise FET ampifiers. Design of the amplifiers is studied and calculations and experimental results are presented. A two-stage amplifier shows a gain of 18dB, a noise of figures≤24dB and an input VSWR of less than 2.1 in the frequency range of 7.6-9GHz.
出处
《固体电子学研究与进展》
CAS
1987年第2期150-156,共7页
Research & Progress of SSE
