摘要
设计并实现了一款高性能的宽带中功率放大器芯片,该芯片采用0.25μm砷化镓赝调制掺杂异质结场效应晶体管工艺,并通过运用共源共栅电路结构,显著提升了放大器的增益水平。同时,引入负反馈技术,有效改善了增益的平坦度,极大地拓宽了放大器的工作带宽范围,使其能够覆盖从6 GHz~18 GHz的广泛频段,满足多样化的无线通信及雷达系统需求。实测数据表明,该芯片在指定频段内实现了稳定的17±0.3 dB增益,输入输出回波损耗均优于-10 dB,展现出了卓越的匹配性能。在5 V工作电压下,电流消耗仅为63 mA,且1 dB压缩点输出功率高达15 dBm,确保了在高功率输出时的稳定性与可靠性。此外,芯片设计紧凑,面积仅为1.94 mm×1.08 mm,为系统集成提供了极大的便利。
A high-performance broadband medium-power amplifier chip is designed and implemented in this paper.The chip adopts the 0.25μm GaAs pseudomorphic high electron mobility transistor process and utilizes a cascode circuit configuration,which significantly improves the gain level of the amplifier.Additionally,the introduction of negative feedback technology effectively improves the flatness of the gain and greatly expands the operating bandwidth range of the amplifier,enabling it to cover a wide frequency range from 6 GHz to 18 GHz,meeting the diverse needs of wireless communication and radar systems.Experimental results show that the chip achieves a stable gain of 17±0.3 dB within the specified frequency band,with both input and output return losses better than-10 dB,demonstrating excellent matching performance.At a working voltage of 5 V,the current consumption is only 63 mA,and the 1 dB compression point output power is as high as 15 dBm,ensuring stability and reliability at high-power output.The compact chip design,with an area of only 1.94 mm×1.08 mm,provides significant convenience for system integration.
作者
李鑫
肖曼琳
蒋明
杜鑫威
LI Xin;XIAO Manlin;JIANG Ming;DU Xinwei(Urban Rail Transit Institute,Shanghai University of Engineering Science,Shanghai 201620,China;Hengyang Power Supply Branch of State Grid Hunan Electric Power Co.,Ltd.,Hengyang Hunan 421001,China)
出处
《现代雷达》
CSCD
北大核心
2024年第11期105-109,共5页
Modern Radar
关键词
Ku波段
中功率放大器
砷化镓赝调制掺杂异质结场效应晶体管工艺
共源共栅
单片微波集成电路
Ku band
medium power amplifier
GaAs pseudomorphic high electron mobility transistor(GaAs pHEMT)process
cascode
monolithic microwave integrated circuit(MMIC)
作者简介
李鑫,男,1996年生,硕士研究生,研究方向为微波射频集成电路研究;肖曼琳,女,1981年生,博士,讲师,研究方向为信号与信息处理、集成电路设计;蒋明,男,1984年生,大学本科,高级工程师,研究方向为电网运行技术分析及关键电路设计;杜鑫威,男,1999年生,硕士研究生,研究方向为射频电路的锁相环技术。
