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Dzyaloshinskii–Moriya interaction and field-free sub-10 nm topological magnetism in Fe/bismuth oxychalcogenides heterostructures

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摘要 Topological magnetism with strong robustness,nanoscale dimensions and ultralow driving current density(106 A/m^(2))is promising for applications in information sensing,storage,and processing,and thus sparking widespread research interest.Exploring candidate material systems with nanoscale size and easily tunable properties is a key for realizing practical topological magnetism-based spintronic devices.Here,we propose a class of ultrathin heterostructures,Fe/Bi_(2)O_(2)X(X=S,Se,Te)by deposing metal Fe on quasi-two-dimensional(2D)bismuth oxychalcogenides Bi_(2)O_(2)X(X=S,Se,Te)with excellent ferroelectric/ferroelastic properties.Large Dzyaloshinskii–Moriya interaction(DMI)and topological magnetism can be realized.Our atomistic spin dynamics simulations demonstrate that field-free vortex–antivortex loops and sub-10 nm skyrmions exist in Fe/Bi_(2)O_(2)S and Fe/Bi_(2)O_(2)Se interfaces,respectively.These results provide a possible strategy to tailor topological magnetism in ultrathin magnets/2D materials interfaces,which is extremely vital for spintronics applications.
作者 Yaoyuan Wang Long You Kai Chang Hongxin Yang 王垚元;游龙;常凯;杨洪新(School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China;Center for Quantum Matter,School of Physics,Zhejiang University,Hangzhou 310058,China;Shenzhen Huazhong University of Science and Technology Research Institute,Shenzhen 518000,China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第9期200-206,共7页 中国物理B(英文版)
基金 the National Key Research and Development Program of China(Grant Nos.2022YFA1405100,2022YFA1403601,2020AAA0109005,and 2023YFB4502100) the“Pioneer”and“Leading Goose”R&D Program of Zhejiang Province(Grant No.2022C01053) the National Natural Science Foundation of China(Grant Nos.12174405,12204497,12327806,and 62074063) Shenzhen Science and Technology Program(Grant No.JCYJ20220818103410022).
作者简介 Corresponding author:Kai Chang.E-mail:lyou@hust.edu.cn;Corresponding author:Hongxin Yang.E-mail:hongxin.yang@zju.edu.cn。
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