摘要
在阻变器件中,通过在氧化铌薄膜和底电极之间旋涂一层金纳米颗粒(Au-NPs)作为界面修饰层,可以明显降低氧化铌忆阻器的阈值电压,提高阈值电压分布的集中性。通过扫描电子显微镜发现,旋涂在底电极上面的Au-NPs分布较为均匀,有利于器件在Au-NPs等固定位置形成导电细丝,从而降低了导电细丝随机形成的可能性。I-V循环测试证实了Au-NPs的引入明显增强了空间电荷限制电流的输运特性,表明有利于固定导电细丝的生长,提升器件稳定性。
In the resistive-variable device,by spin-coating a layer of gold nanopartic-les(Au-NPs)between the niobium oxide film and the bottom electrode as an interfacial modification layer,the threshold voltage of the niobium oxide memristor can be significant-ly reduced,and the centralisation of the distribution of the threshold voltage can be impr-oved.Through scanning electron microscopy,it was found that the Au-NPs spin-coated on top of the bottom electrode had a more uniform distribution,which was conducive to the formation of conductive filaments in the device at fixed positions such as Au-NPs,thus r-educing the possibility of the random formation of conductive filaments.The I-V cycling t-est confirmed that the introduction of the Au-NPs significantly enhanced the transport cha-racteristics of the space-charge-limited currents,which was shown to be conducive to the growth of the fixed conductive filaments,and enhance the device stability.
作者
王志
陈喆
Wang Zhi;Chen Zhe(School of Materials Science and Engineering,Wuhan University of Engineering,Wuhan,China)
出处
《科学技术创新》
2024年第17期75-80,共6页
Scientific and Technological Innovation
关键词
氧化铌薄膜
界面修饰
金纳米颗粒
niobium oxide films
interfacial modification
gold nanoparticles
作者简介
王志(1999-),男,硕士在读(武汉工程大学材料加工工程专业2021级),研究方向:半导体阻变器件;通讯作者:陈喆(1981-),男,博士,教授,研究方向:新型膜材料。
