摘要
基于130 nm双极型晶体管与互补金属氧化物半导体(Bipolar and Complementary Metal Oxide Semiconductor,BiCMOS)工艺,采用矢量合成架构的高精度移相器架构,提出了一款满足5G与民用卫星通信应用需求的K频段4通道高精度有源移相器。在移相器输入端和输出端,为了实现单端信号与差分信号的互相转换,同时为信号链路提供一定的增益,采用了有源巴伦结构。为了以更小的芯片面积实现差分信号到4路I/Q正交信号的转换,采用了折叠朗格耦合器;为了实现高精度的相位调节控制,采用了有源矢量合成器。芯片实测结果表明,在18~22 GHz的带宽内,各通道小信号增益在-3~-2 dB之间,增益平坦度小于1 dB,在-45℃~85℃之间增益波动小于3.5 dB,6位移相器移相误差均方根(Root Mean Square,RMS)小于2.5°。芯片尺寸为2.68 mm×2.5 mm。
Based on 130 nm bipolar and complementary metal oxide semiconductor(BiCMOS)technology,a K-band 4-channel high precision active phase shifter is proposed,for 5G and civil satellite communication application by using vector modulated phase shifter.At the input and output port of the proposed phase shifter,active balun is used to realize the transformation between single signal and differential signal,and also provide a proper gain for the signal chain.To minimize the chip area,a folded Lange hybrid is used to transform differential signal into 4-path I/Q signal.An active vector modulator is used to realize highly precise signal phase control.The chip-level test results show that,from 18 GHz to 22 GHz bandwidth,the small signal gain of each channel varies from-3 dB to-2 dB,the gain flatness<1 dB,the gain variation from-45℃to 85℃is less than 3.5 dB,and the phase error root mean square(RMS)of the 6 b phase shifter is less than 2.5°.The chip size is 2.68 mm×2.5 mm.
作者
张然
ZHANG Ran(Southwest China Institute of Electronic Technology,Chengdu 610036,China)
出处
《电讯技术》
北大核心
2024年第5期805-811,共7页
Telecommunication Engineering
作者简介
通信作者:张然,男,1989年生于四川中江,2015年于上海交通大学获电子科学与技术专业硕士学位,现为工程师,主要研究方向为硅基射频模拟集成电路设计,Email:brian8982@126.com。
