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Li、Ce掺杂对NBTa-CBN高温压电陶瓷性质的影响研究

Effect of Li、Ce Doping on NBTa-CBN High-Temperature Piezoelectric Ceramic Properties
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摘要 采用传统固相反应法制备了Ca_(0.5)(Na_(0.5)Bi_(0.5))_(0.5-3 x)(Li_(0.5)Ce_(0.5))_(3x) Bi_(2)TaNb_(0.99)Mn_(0.01)O_(9)(CNBTNM-LC100_(x))高居里温度(T_(C))压电陶瓷。研究了Li、Ce复合离子掺杂对陶瓷结构和电学性质的影响。结果表明,随着Li、Ce掺杂量的增加,CNBTNM-LC100_(x)陶瓷的晶体结构趋于由正交相向四方相转变,压电常数d 33逐渐增大,当x>0.04(x为摩尔分数)时,d 33趋于降低。x=0.04时,具有最优的综合电学性能,d 33约为15.9 pC/N,600℃下直流电阻率ρ约为5.9×10^(5)Ω·cm,介电损耗tanδ(1 MHz)约为7%,T_(C)约为887℃。 A Ca_(0.5)(Na_(0.5)Bi_(0.5))_(0.5-3 x)(Li_(0.5)Ce_(0.5))_(3x) Bi_(2)TaNb_(0.99) Mn_(0.01)O_(9)(CNBTNM-LC100_(x))solid-solution piezoelectric ceramic with high Curie temperature(T C)was prepared using the traditional solid-state reaction method.The effect of Li,Ce composite iondoping on the ceramic structure and electrical properties was studied.The results show that,with increasing Li,Ce doping concentration,the crystal structure of CNBTNM-LC100_(x)ceramics tends to transition from orthogonal to tetragonal,and the piezoelectric constant d 33 gradually increases.When the molar fraction x>0.04,d_(33) tends to decrease.When x=0.04,the ceramic sample exhibits the best comprehensive performance,with d 33≈15.9 pC/N,and the DC resistivityρ≈5.9×10^(5)Ω·cmat 600℃.Further,the dielectric loss tanδ(1 MHz)≈7%,and T_(C)≈887℃.
作者 徐鸿飞 史伟 官尚义 吴禹桐 陈强 XU Hongfei;SHI Wei;GUAN Shangyi;WU Yutong;CHEN Qiang(College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China)
出处 《压电与声光》 CAS 北大核心 2024年第2期184-190,共7页 Piezoelectrics & Acoustooptics
基金 国家自然科学基金资助项目(51932010)。
关键词 压电陶瓷 铋层状铁电体 高居里温度 Na_(0.5)Bi_(2.5)Ta_(2)O_(9) CaBi_(2)Nb_(2)O_(9) piezoelectric ceramics bismuth layer-structured ferroelectrics high Curie temperature Na_(0.5)Bi_(2.5)-Ta_(2)O_(9) CaBi_(2)Nb_(2)O_(9)
作者简介 徐鸿飞(1998-),男,安徽省芜湖市人,硕士生;通信作者:陈强,男,四川省人,研究员。
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