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Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_(1-x-y)Fe_(x)Ni_(y)Sb

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摘要 (Ga,Fe)Sb is a promising magnetic semiconductor(MS)for spintronic applications because its Curie temperature(T_(C))is above 300 K when the Fe concentration is higher than 20%.However,the anisotropy constant Ku of(Ga,Fe)Sb is below 7.6×10^(3)erg/cm^(3)when Fe concentration is lower than 30%,which is one order of magnitude lower than that of(Ga,Mn)As.To address this issue,we grew Ga_(1-x-y)Fe_(x)Ni_(y)Sb films with almost the same x(≈24%)and different y to characterize their magnetic and electrical transport properties.We found that the magnetic anisotropy of Ga_(0.76-y)Fe_(0.24)Ni_(y)Sb can be enhanced by increasing y,in which Ku is negligible at y=1.7%but increases to 3.8×10^(5)erg/cm^(3)at y=6.1%(T_(C)=354 K).In addition,the hole mobility(μ)of Ga_(1-x-y)Fe_(x)Ni_(y)Sb reaches 31.3 cm^(2)/(V∙s)at x=23.7%,y=1.7%(T_(C)=319 K),which is much higher than the mobility of Ga_(1-x)Fe_(x)Sb at x=25.2%(μ=6.2 cm^(2)/(V∙s)).Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of(Ga,Fe)Sb by using Ni co-doping.
出处 《Journal of Semiconductors》 EI CAS CSCD 2024年第1期16-21,共6页 半导体学报(英文版)
基金 This work is supported by the National Key R&D Program of China(No.2021YFA1202200) the CAS Project for Young Scientists in Basic Research(No.YSBR-030) the National Natural Science Foundation Program of China(No.12174383) H L Wang also acknowledges the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(No.2021110).
作者简介 Correspondence to:Hailong Wang received his B.Sc.degree from the School of Physics of Peking University in 2009,and a PhD degree from the University of Chinese Academy of Sciences in 2014.From 2014 to 2016,he was a postdoc at the Institute of Physics in Chinese Academy of Sciences,and then worked in the Institute of Semiconductors in Chinese Academy of Sciences.His current interests includeⅢ−Ⅴmagnetic semiconductors,semiconductor two-dimensional electron gas and magnetic metal/semiconductor heterostructures.H L Wang,allen@semi.ac.cn;Zhi Deng obtained his B.E.degree from Center of Materials Science and Optoelectronics Engineering in 2020 at University of Chinese Academy of Sciences.He then joined the State Key Laboratory of Superlattices and Microstructures under the supervision of Prof.Jianhua Zhao.His research focuses on FebasedⅢ−Ⅴmagnetic semiconductors.
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