摘要
为解决传统宽带大功率放大器工作效率低的问题,采用新型电阻电抗连续B/J类功放模式拓展晶体管高效率的输出负载阻抗空间,从而提高宽带功放的漏级输出效率。提出了一款基于0.25μm栅长的氮化镓高电子迁移率晶体管(GaN HEMT)的平衡式功放。该功放将LC匹配网络和切比雪夫阻抗变换器相结合实现GaN HEMT器件宽带输入输出阻抗匹配,并利用3 dB Lange耦合器实现宽带平衡式功率合成。在连续波测试条件下,该平衡式功放在2~6 GHz频带内输出功率大于100 W,漏极效率大于45%,功率增益大于9.0 dB,抗负载失配比优于5:1。
In this paper,in order to solve the problem of low efficiency of traditional wideband high-power amplifier,a new type of resistive reactance continuous B/J power amplifier mode is adopted to expand the output load impedance space of transistor with high efficiency.As a result,the drain stage output efficiency of broadband power amplifier is improved.Then,a balanced power amplifier(PA)based on 0.25μm gate-length GaN HEMT is proposed.The PA combines LC matching network and Chebyshev impedance converter to realize broadband input and output impedance matching of GaN HEMT device,and utilizes a 3 dB Lange coupler to achieve broadband balanced power combination.Under the operating condition of continuous wave(CW),the proposed balanced PA has an output power greater than 100 W,drain efficiency greater than 45%,power gain greater than 9 dB,and anti-load mismatch better than 5:1 in the frequency range of 2 GHz to 6 GHz.
作者
来晋明
徐会博
李志友
倪涛
王超杰
银军
王海龙
马晓华
LAI Jinming;XU Huibo;LI Zhiyou;NI Tao;WANG Chaojie;YIN Jun;WANG Hailong;MA Xiaohua(School of Microelectronics,Xidian University,Xi’an 710071,China;The 29th Research Institute of China Electronics Technology Group Corporation,Chengdu 610036,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050050,China)
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
2024年第1期8-13,共6页
Journal of University of Electronic Science and Technology of China
作者简介
通信作者:来晋明,博士,研究员级高级工程师,主要从事射频收发组件、大功率发射机等方面的研究,E-mail:alai_nuli@qq.com。
