摘要
二维GaN纳米结构的制备对二维GaN基电子、光电子等纳米器件具有重要意义。本文采用化学气相沉积(CVD)制备二维GaN纳米片时,使用液态金属催化剂,成功制备了二维GaN纳米片,得到制备GaN纳米片的最佳工艺条件。通过对制备的GaN纳米片进行扫描电子显微镜(SEM)、能谱仪(EDS)以及X射线衍射仪(XRD)测试表征,结果表明:制备的GaN纳米片是表面光滑、大小薄厚均匀、结晶度良好的六方钎锌矿结构GaN纳米片。
The fabrication of two-dimensional GaN nanostructures is of great significance to two-dimensional GAN-based electronic and photoelectronic nanodevices.In this paper,two-dimensional GaN nanosheets were prepared by chemical vapor deposition(CVD),and the liquid metal catalyst was used to prepare two-dimensional GaN nanosheets.The prepared GaN nanosheets were characterized by scanning electron microscope(SEM),energy dispersive spectrometer(EDS)and X-ray diffractometer(XRD).The results showed that the prepared GaN nanosheets were hexagonal zinc brazing structure GaN nanosheets with smooth surface,uniform size and good crystallity.
作者
蔡晓平
沈鹏飞
崔真
李恩玲
高春昱
CAI Xiaoping;SHENG Pengfei;CUI Zhen;LI Enling;GAO Chunyu
出处
《计量与测试技术》
2023年第11期13-16,共4页
Metrology & Measurement Technique
基金
国家自然科学基金项目(项目编号:12104362)。