摘要
为改善SiC晶片在切割过程中存在的边缘崩边和亚表面损伤等问题,采用Python语言与Abaqus有限元分析软件相结合的方法建立超薄金刚石切割片切割SiC晶片的模型,研究切割参数对切割过程中的切割力、切割温度、晶片切割边缘形貌、切割边缘损伤宽度以及晶片亚表面损伤深度的影响。结果表明:切割力、切割温度与切割深度正相关,切割边缘损伤程度和亚表面损伤深度存在最优值。在切割深度为6μm时,SiC晶片的切割效果最好,其切割边缘损伤宽度为8μm,损伤面积为4905.56μm^(2),亚表面损伤深度为10.67μm,损伤面积为7022.18μm^(2)。在切割速度为60~121 m/s的高速切割阶段,切割速度对切割力、晶片的温度、晶片切割边缘形貌及亚表面损伤均无显著影响。
To address issues like edge collapse and subsurface damage during the cutting process of SiC wafers,a model for cutting SiC wafers with ultra-thin diamond blades was established by combining Python language and Abaqus finite element analysis software.The effects of cutting parameters on cutting force,cutting temperature,wafer cutting edge morphology,cutting edge damage width and subsurface damage depth of wafer were studied.The results show that cutting force and cutting temperature are positively correlated with cutting depth,and there is an optimal value for the damage degree of the cutting edge and the subsurface damage depth.When the cutting depth is 6μm,the cutting effect of SiC wafer is the best.The surface cutting edge damage width is 8μm,the damage area is 4905.56μm^(2),the subsurface damage depth is 10.67μm and the damage area is 7022.18μm^(2).In the high-speed cutting stage,where the cutting speed ranges from 60 to 121 m/s,cutting speed has no significant effect on cutting force,wafer temperature,wafer cutting edge morphology or subsurface damage.
作者
何艳
李翔
高兴军
凡林
刘铭
徐子成
HE Yan;LI Xiang;GAO Xingjun;FAN Lin;LIU Ming;XU Zicheng(School of Mechanical Engineering,Liaoning Petrochemical University,Fushun 113001,Liaoning,China)
出处
《金刚石与磨料磨具工程》
CAS
北大核心
2023年第5期621-631,共11页
Diamond & Abrasives Engineering
基金
辽宁省博士科研启动基金计划(2022-BS-292)
辽宁省教育厅科学技术研究(LJKZ0383)
辽宁石油化工大学引进人才科研启动基金(2020XJJL-012)。
作者简介
何艳,女,1991年生,博士、讲师。主要研究方向:半导体材料的高效加工技术、纳米制造。E-mail:1422017226@qq.com;通信作者:高兴军,男,1979年生,硕士、副教授。主要研究方向:精密磨削、纳米制造。E-mail:gaoxingjun@lnpu.edu.cn。
