摘要
Electronic properties of two-dimensional(2D) materials can be strongly modulated by localized strain. The typical spatial resolution of conventional Kelvin probe force microscopy(KPFM) is usually limited in a few hundreds of nanometers, and it is difficult to characterize localized electronic properties of 2D materials at nanoscales. Herein, tip-enhanced Raman spectroscopy(TERS) is proposed to combine with KPFM to break this restriction. TERS scan is conducted on ReS2bubbles deposited on a rough Au thin film to obtain strain distribution by using the Raman peak shift. The localized contact potential difference(CPD) is inversely calculated with a higher spatial resolution by using strain measured by TERS and CPD-strain working curve obtained using conventional KPFM and atomic force microscopy. This method enhances the spatial resolution of CPD measurements and can be potentially used to characterize localized electronic properties of 2D materials.
作者
罗宇
苏伟涛
张娟娟
陈飞
武可
曾宜杰
卢红伟
Yu Luo;Weitao Su;Juanjuan Zhang;Fei Chen;Ke Wu;Yijie Zeng;Hongwei Lu(School of Sciences,Hangzhou Dianzi University,Hangzhou 310018,China;Hunan Petrochemical Vocational Technology College,Yueyang 414011,China;College of Materials and Environmental Engineering,Hangzhou Dianzi University,Hangzhou 310018,China)
基金
Project supported by the Zhejiang Provincial Natural Science Foundation of China (Grant No. LZ22A040003)
the National Natural Science Foundation of China (Grant No. 52027809)。
作者简介
Corresponding author:苏伟涛,E-mail:suweitao@hdu.edu.cn;Corresponding author:张娟娟,E-mail:josephy881006@163.com。
