摘要
十字形霍尔器件凭借其对称性好、灵敏度高和失调电压低等优点广泛应用于高精度霍尔传感器中。为优化霍尔传感器的性能参数,研究了工作在电压模式下的十字形霍尔器件叉指区长宽比(L/W)对器件性能的影响。通过对器件进行理论建模计算和三维TCAD仿真,确定获得最优电流相关灵敏度和信噪比(SNR)的L/W范围,并基于0.18μm标准CMOS工艺对器件结构进行了流片验证。测试结果表明,电压模式下霍尔器件的电流相关灵敏度随L/W的增大而迅速增大,在L/W≥1.0后增大趋势变缓并趋于恒定,而L/W为0.5~1.0时可获得最佳信噪比。当L/W为1.0时霍尔器件性能最优,电流相关灵敏度达到47.60 V/(A·T),SNR为2.301,而输出热噪声电压仅为5.02μV,同时获得了高的灵敏度和信噪比。
Cross-like Hall devices are widely used in high precision Hall sensors because of their good symmetry,high sensitivity and low offset voltage.To optimize the performance parameters of Hall sensors,the influence of the aspect ratio(L/W)of interdigital area of the cross-like Hall device operating in voltage mode on device performance was investigated.The L/W range that can achieve optimal currentrelated sensitivity and signal-to-noise ratio(SNR)was determined by theoretical modeling calculation and three-dimensional TCAD simulation of the device.Based on the standard O.18μm CMOS technology,the device was fabricated and tested.The test results show that the current-related sensitivity of Hall devices in voltage mode improves rapidly with the increase of L/W,and the increase trend becomes slow and tends to be constant when L/W≥1.0,while the best SNR can be obtained when L/W is in the range of 0.5-1.0.It is found that the Hall device performs optimally when L/W is 1.0,with a current-related sensitivity of 47.60 V/(A·T),an SNR of 2.301 and an output thermal noise voltage of only 5.02μV,achieving high sensitivity and high SNR simultaneously.
作者
刘源
李建强
李良
胡杏杏
徐跃
Liu Yuan;Li Jianqiang;Li Liang;Hu Xingxing;Xu Yue(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;Beijing Smartchip Microelectronics Technology Company Limited,Beijing 102200,China;National and Local Joint Engineering Laboratory of RF Integration&Micro-Assembly Technology,Nanjing210023,China)
出处
《半导体技术》
CAS
北大核心
2023年第8期670-675,共6页
Semiconductor Technology
基金
国家自然科学基金资助项目(62171233,61871231)
中国电子学会-智芯科研专项(2022-7)
江苏省农业科技自主创新资金资助项目(CX(21)3062)。
作者简介
刘源(1999-),女,江苏徐州人,硕士研究生,主要从事霍尔传感器集成电路设计研究;李建强(1978-),男,陕西铜川人,硕士,高级工程师,主要从事集成电路设计、工艺及可靠性技术研究;徐跃(1972-),男,江苏南京人,博士,教授,博士生导师,主要从事CMOS集成电路设计和CMOS片上传感器研究。
