摘要
由于γ射线对SiO_(2)的电离作用,会引起MOS管阈值电压负漂移和二极管死区漏电变化,负漂移和漏电变化程度随MOS管栅氧厚度增加而加大。这样在设计高压直采ADC时,实现稳定基准和低漏电开关是个难点,通常的解决方法是优化电路参数裕量和版图,但很少考虑MOS管的反型和二极管的死区漏电。重点研究了MOS器件阈值和二极管死区漏电流变化对器件参数影响的机理,并提出一种不同电源电压MOS管结合设计思路,同时考虑了减小二极管死区漏电的影响。最后,通过使用不同电源电压MOS管设计和二极管死区漏电流分析,高压ADC在50 k rad(Si)总剂量条件下仍能达到设计要求。
Due to the ionization of SiO_(2)byγrays,the threshold voltage of MOS transistor will shift negatively and the leakage current of diode will change.The negative drift and leakage current increase with the increase of the gate oxide thickness of the MOS transistor.It is difficult to achieve stable reference and low leakage switch of high voltage direct sampling ADC.The usual solution is optimizing circuit parameter margin and layout.The inversion of the MOS transistor and the dead zone leakage of the diode are rarely considered.The paper focuses on the influence mechanism of the change of MOS transistor threshold voltage and diode dead zone leakage current on device parameters.A design idea of combining different supply voltage MOS transistors is proposed,and the effect of diode dead zone leakage is also considered.Finally,by using different supply voltage MOS transistors and analysing dead zone leakage current,the high voltage direct sampling ADC meet the design requirements in 50 k rad(Si)total dose radiation.
作者
曹梦琦
王晓晖
高炜祺
CAO Mengqi;WANG Xiaohui;GAO Weiqi(Chongqing GigaChip Technology Co.,Ltd.,Chongqing 400060,China;Xidian University,Xi’an 710071,China)
出处
《空间电子技术》
2023年第4期45-49,共5页
Space Electronic Technology
关键词
高压直采ADC
MOS管阈值电压
二极管死区漏电
总剂量
high voltage direct sampling ADC
threshold voltage of MOS transistor
dead zone leakage current of diode
total dose radiation
作者简介
曹梦琦(1989-),陕西西安人,学士,工程师。主要研究方向为微波技术。E-mail:wentugao@126.com。
