摘要
本文采用金属有机化学气相沉积(MOCVD)生长原位SiN_(x)栅介质制备了用于Ka波段高功率毫米波应用的AlN/GaN金属绝缘体半导体高电子迁移率晶体管(MIS-HEMTs)。原位生长SiN_(x)栅介质显著抑制了栅反向漏电、栅介质/AlN界面态密度和电流坍塌。所研制的MIS HEMTs在V_(GS)=2 V时最大饱和输出电流为2.2 A/mm,峰值跨导为509 m S/mm,在V_(GS)=-30 V时肖特基栅漏电流为4.7×10^(-6)A/mm。采用0.15μm T形栅技术,获得98 GHz的fT和165 GHz的f_(MAX)。大信号测量表明,在连续波模式下,漏极电压V_(DS)=8 V时,MIS HEMT在40 GHz下输出功率密度2.3 W/mm,45.2%的功率附加效率(PAE),而当V_(DS)增加到15 V时,功率密度提升到5.2 W/mm,PAE为42.2%。
In this work,high-efficiency AlN/GaN metal-insulator-semiconductor high electron mobility transis⁃tors(MIS-HEMTs)have been fabricated for millimeter wave applications.A 5-nm SiN_(x) insulator is grown in-situ as the gate insulator by metal-organic chemical vapor deposition(MOCVD),contributing to remarkably sup⁃pressed gate leakage,interface state density and current collapse.The fabricated MIS-HEMTs exhibit a maximum drain current of 2.2 A/mm at V_(GS)=2 V,an extrinsic peak Gm of 509 mS/mm,and a reverse Schottky gate leakage current of 4.7×10^(-6) A/mm when V_(GS)=-30 V.Based on a 0.15μm T-shaped gate technology,an fT of 98 GHz and f_(MAX) of 165 GHz were obtained on the SiN/AlN/GaN MIS-HEMTs.Large signal measurement shows that,in a continuous-wave mode,the MIS-HEMTs deliver an output power density(Pout)of 2.3 W/mm associated with a power-added efficiency(PAE)of 45.2%at 40 GHz,and a Pout(PAE)of 5.2 W/mm(42.2%)when V_(DS) was fur⁃ther increased to 15 V.
作者
陈晓娟
张一川
张昇
李艳奎
牛洁斌
黄森
马晓华
张进成
魏珂
CHEN Xiao-Juan;ZHANG Yi-Chuan;ZHANG Shen;LI Yan-Kui;NIU Jie-Bin;HUANG Sen;MA Xiao-Hua;ZHANG Jin-Cheng;WEI Ke(Xidian University,Xi'an 710071,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2023年第4期483-489,共7页
Journal of Infrared and Millimeter Waves
基金
Supported by the National Natural Science Foundation of China(61822407,62074161,62004213)
the National Key Research and De-velopment Program of China under(2018YFE0125700)。
关键词
AlN/GaN
金属绝缘体半导体高电子迁移率晶体管
KA波段
低损耗
低偏压
AlN/GaN
metal-insulator-semiconductor High Electron Mobility Transistors(MIS-HEMTs)
millimeter wave
low dispersion
low drain voltage
作者简介
Corresponding authors:CHEN Xiao-Juan(1979-),female,ChongQing,master.Research area involves Compound Semiconductor materials and devices.E-mail:chenxiaojuan@ime.ac.cn,E-mail:chenxiaojuan@ime.ac.cn;Corresponding authors:魏珂,weike@ime.ac.cn。
