摘要
鉴于国内核物理实验对高性能硅探测器有大量需求,而国外对中国进行技术封锁,满足实验需求的高性能探测器不易获得.中国科学院近代物理研究所在原有制备工艺基础上首次采用套刻技术,有效减少了光刻及腐蚀过程造成的Si O2沾污,大幅提高了探测器性能和成品率.本文对采用该工艺研制的300μm厚,有效面积50 mm×50 mm硅探测器进行电学性能测试和在束探测性能测试.探测器在-45 V耗尽电压下,其漏电流小于40 n A,对5 Me V左右的a粒子的能量分辨(σ)约为45 ke V.将该探测器作为能量沉积(ΔE)探测器,利用250 Me V/u的11C放射性束流及其在次级碳靶上的反应产物对探测器进行了探测性能测试.测试结果显示,该探测器对于C元素的电荷数Z的分辨为0.17,与文献中记录的国外生产的同类型探测器的实验数据(Z分辨0.19)相当,可以满足中高能放射性束实验对轻质量区粒子鉴别的要求.
In view of the great demand for large-area silicon detectors in domestic nuclear physics experiments,a type of 300-μm-thick high-performance square silicon detector with a large active area of 50 mm×50 mm by using overprinting technology is developed in the Institute of Modern Physics of the Chinese Academy of Sciences.Based on this technology,SiO_(2)contamination caused by the photolithography and corrosion processes is effectively reduced.The detector has an excellent performance with a yield of up to 80%.Under-45 V(depletion voltage)bias,the leakage current of the detector is less than 40 nA.The detector is tested with a three-component a radioactive source.The energy resolution(s)is about 45 keV for 5-MeV a particles.Used as an energy deposition(DE)detector,the detector performance is also tested for measuring reaction products of 250 MeV/u 11C radioactive beams impinging on a carbon target.The results show that the charge number resolution of a single silicon detector is 0.17 for the carbon isotope,which is similar to that measured with the same type of detectors available from the market.With the average deposition energy of three silicon detectors used,the charge number resolution for carbon isotope reaches a better value of 0.11.With this resolution,C and B isotopes are clearly distinguished,meeting the requirements for particle identification in intermediate-and high-energy radioactive beam experiments.
作者
陈翠红
李占奎
王秀华
李荣华
方芳
王柱生
李海霞
Chen Cui-Hong;Li Zhan-Kui;Wang Xiu-Hua;Li Rong-Hua;Fang Fang;Wang Zhu-Sheng;Li Hai-Xia(Nuclear Detector Group,Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2023年第12期74-82,共9页
Acta Physica Sinica
基金
国家自然科学基金(批准号:11775283,12005267,12275330)资助的课题。
关键词
硅探测器
套刻技术
漏电流
电荷数分辨
silicon detector
overprinting technology
leakage current
charge number resolution
作者简介
通信作者:李海霞.E-mail:lihaixia@impcas.ac.cn。
