摘要
基于TSMC 65 nm CMOS工艺,设计了一款高效率快速响应的全集成KY升压转换器.针对脉宽调制(PWM)轻载效率低,瞬态响应慢的问题,提出了一种带瞬态增强的自适应恒定导通与关断时间的变频控制策略.该策略采用自适应时间控制技术,可根据输入、输出电压和负载电流自动调整计时,优化了输出电压纹波.同时设计了瞬态增强电路,当输出低至限压阈值时,通过延长计时器的充电时间加速系统恢复.此外,还设计了DCM自校准电路,实现了精确的过零关断.仿真结果表明,在输入电压1.5 V,输出电压1.8 V的典型应用下,负载范围为0~120 mA,峰值效率为71.5%.在10 mA轻载下,效率仍有52.4%.当负载电流在110 mA的阶跃高度瞬变时,响应速度分别为2.55 ns/mA和6.18 ns/mA.
Based on TSMC 65 nm CMOS process,a fully-integrated KY boost converter with high efficiency and fast response is designed.Aiming at the problem of low light-load efficiency and slow transient response of pulse width modulation(PWM),a variable frequency control strategy named adaptive constant on/off time with transient enhancement is proposed.The strategy adopts adaptive time control technology,which can automatically adjust the timing according to input voltage,output voltage and load current,and optimizes the output voltage ripple.At the same time,a transient enhancement circuit is designed.When the output is as low as the voltage limiting threshold,the charging time of timers is extended,which accelerates the system recovery.In addition,a DCM self-calibration circuit is designed to achieve accurate zero-crossing turn-off.The simulation results show that the load ranges from 0 to 120 mA and the peak efficiency is 71.5%under the typical application of 1.5 V input voltage and 1.8 V output voltage.At 10 mA light load,the efficiency is still 52.4%.When the load transients at a step height of 110 mA,the response speed of the system is 2.55 ns/mA and 6.18 ns/mA,respectively.tively.
作者
李龙迪
邹志革
皮庆广
谢锦红
童乔凌
刘冬生
LI Longdi;ZOU Zhige;PI Qingguang;XIE Jinhong;TONG Qiaoling;LIU Dongsheng(School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan,430074,China)
出处
《微电子学与计算机》
2023年第5期118-125,共8页
Microelectronics & Computer
基金
国家自然科学基金(62134002)
国家重点研发计划(2021YFA0715502)。
作者简介
李龙迪,男,(2000-),硕士研究生.研究方向为模拟集成电路设计;通讯作者:邹志革,男,(1975-),博士,副教授.研究方向为模拟集成电路设计.E-mail:zouzhige@hust.edu.cn;皮庆广,男,(1996-),硕士研究生.研究方向为模拟集成电路设计;谢锦红,男,(1998-),硕士研究生.研究方向为模拟集成电路设计;童乔凌,男,(1981-),博士,研究员,博士生导师.研究方向为超大规模集成电路设计;刘冬生,男,(1979-),博士,教授.研究方向为能效无线传输技术及芯片设计、后量子密码算法及密码芯片设计.
