摘要
采用反应磁控溅射法,在溅射气压、溅射功率和衬底温度恒定的条件下,通过调控氮氩体积流量比,在单晶Si衬底上制备AlN薄膜。利用X射线衍射仪(XRD)、原子力显微镜(AFM)和场发射扫描电子显微镜(FESEM)研究氮氩体积流量比对AlN薄膜的生长取向、晶体质量及沉积速率的影响规律并分析其机理。结果显示,提高氮氩体积流量比有利于AlN薄膜(002)择优取向的生长,但过高的氮氩体积流量比会降低薄膜的沉积速率。在溅射气压为5 mTorr(1 Torr=133.3 Pa)、溅射功率为500 W、衬底温度为200℃、氮氩体积流量(cm3/min)比为14∶6时,在单晶Si衬底上可以制备出质量较好的,具有良好(002)择优取向的AlN薄膜。研究结果可为反应磁控溅射制备高质量AlN薄膜提供工艺参数设置规律指导。
Using the reactive magnetron sputtering method,under the conditions of constant sputtering pressure,sputtering power and substrate temperature,AlN thin films were prepared on the single crystal Si substrate through regulation of volume flow rate ratio of nitrogen and argon.Effect rules of volume flow rate ratio of nitrogen and argon on the growth orientation,crystal quality,and deposition rate of the AlN thin films were researched by X-ray diffractometer(XRD),atomic force microscope(AFM),field emission scanning electron microscope(FESEM),and the mechanism was analyzed.The results show that increasing volume flow rate ratio of nitrogen and argon can promote(002)preferred orientation growth of the AlN thin films,however,superhigh volume flow rate ratio of nitrogen and argon will reduce the deposition rate of the thin films.When the sputtering pressure is 5 mTorr(1 Torr=133.3 Pa),sputtering power is 500 W,substrate temperature is 200℃,and volume flow rate(cm~3/min)ratio of nitrogen and argon is 14∶6,the AlN thin films along(002)preferred orientation with preferable quality can be prepared on the single crystal Si substrate.The research results provide process parameters set rules guide for the preparation of high-quality AlN thin films by reaction magnetron sputtering.
作者
王强文
郭育华
Wang Qiangwen;Guo Yuhua(The 38^(th)Research Institute,CETC,Hefei 230088,China)
出处
《微纳电子技术》
CAS
北大核心
2023年第1期154-158,共5页
Micronanoelectronic Technology
基金
合肥市自然科学基金资助项目(2021042)。
关键词
ALN薄膜
反应磁控溅射
氮氩体积流量比
结晶取向
沉积速率
AlN thin film
reactive magnetron sputtering
volume flow rate ratio of nitrogen and argon
crystal orientation
deposition rate
作者简介
通信作者:郭育华;王强文(1989-),女,安徽合肥人,博士,高级工程师,主要研究方向为金属基化合物薄膜制备与性能及微系统集成工艺。
