摘要
以Al2O_(3)作为单晶衬底,采用激光脉冲溅射技术(PLD)制备了四种不同衬底温度的STO/YSZ/GDC(SrTiO_(3)/8 mol%Y2O_(3)∶ZrO_(2)/Ce_(0.9)Gd_(0.1)O_(2)-δ)超晶格电解质。采用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对薄膜生长特性进行表征,利用频阻抗/材料分析仪测试了STO/YSZ/GDC超晶格电解质的电学特性。结果表明,当衬底温度为750℃时,STO/YSZ/GDC超晶格电解质表面平整,晶粒排列紧密,薄膜整体结晶良好;STO、YSZ和GDC都沿(111)取向择优生长。随着衬底温度的提高,晶粒尺寸减小,克服的势垒降低,活化能变小,电导率增大。
The STO/YSZ/GDC(SrTiO_(3)/8 mol%Y2O_(3)∶ZrO_(2)/Ce_(0.9)Gd0.1O_(2)-δ) superlattice electrolytic films with four different substrate temperatures were fabricated on Al2O_(3)single crystal substrate by pulsed laser deposition(PLD) method. The growth characteristics of the films were characterized by X-ray diffraction(XRD) and scanning electron microscopy(SEM). The electrical properties of STO/YSZ/GDC superlattice electrolyte were measured by frequency impedance/material analyzer. The results showed that the surface of STO/YSZ/GDC superlattice electrolyte was flat, the grains were arranged closely and the whole film crystallized well when the substrate temperature was 750 ℃. STO, YSZ and GDC were preferential growth all along the(111) direction.With the increase of substrate temperature, the grain size decreased, the potential barrier was reduced, activation energy decreased and conductivity increased.
作者
张磊
敖敦格日乐
何佳
张海霞
薛康
石磊
鲍秀珍
周涛
韩永平
栾江宁
丁铁柱
ZHANG Lei;AODUN Gerile;HE Jia;ZHANG Hai-xia;XUE Kang;SHI Lei;BAO Xiu-zhen;ZHOU Tao;HAN Yong-ping;LUAN Jiang-ning;DING Tie-zhu(Institute of Computer Information,Inner Mongolia Medical University,Hohhot O10110,China;Faculty of Physical Science and Technology,Inner Mongolia University,Hohhot 010021,China)
出处
《稀土》
CAS
CSCD
北大核心
2022年第5期102-108,共7页
Chinese Rare Earths
基金
国家自然科学基金项目(41571473)。
作者简介
张磊(1981-),女,内蒙古呼和浩特人,硕士,讲师,主要从事电解质材料的研究,E-mail:zhang1411649742@qq.com;通讯作者:石磊,副教授,E-mail:120138941@qq.com。
