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基于GaAs PHEMT工艺的超宽带多通道开关滤波器组MMIC

An Ultra-Wideband Multi-Channel Switching Filter Bank MMIC Based on GaAs PHEMT Technology
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摘要 基于0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,研制了一款超宽带7路开关滤波器组单片微波集成电路(MMIC)芯片。芯片内集成了开关、驱动电路和带通滤波器,实现了开关滤波功能。开关采用反射式串-并联混合结构;译码器和驱动电路控制某一支路开关的导通或关断;带通滤波器由集总电感和电容组成。该开关滤波器组芯片通带频率覆盖0.8~18 GHz。探针测试结果表明,开关滤波器组芯片各个支路的中心插入损耗均小于8.5 dB,通带内回波损耗小于10 dB,典型带外衰减大于40 dB。为后续研发尺寸更小、性能更优的开关滤波器组提供了参考。 Based on 0.25μm GaAs pseudomorphic high electron mobility transistor(PHEMT)technology,an ultra-wideband 7-channel switching filter bank monolithic microwave integrated circuit(MMIC)chip was designed.The switches,driver circuits and band-pass filters were integrated inside the chip to realize the function of switching filtering.Reflective series-shunt hybrid structure were adopted to design the switches.The on or off of a switch branch was controlled by decoder and driver.The band-pass filters were composed of lumped inductance and capacitance.The pass band of the switching filter bank chip covers 0.8-18 GHz.The probe test results show that the insertion loss at center frequency of each channel is less than 8.5 dB,the in-band return loss is less than 10 dB,the typical out-of-band attenuation is greater than 40 dB.It provides reference for further research and development of switching filter banks with smaller size and better performance.
作者 王胜福 王洋 李丽 于江涛 张仕强 李宏军 Wang Shengfu;Wang Yang;Li Li;Yu Jiangtao;Zhang Shiqiang;Li Hongjun(The 13th Research Institute,CETC,Shijiazhuang 050051,China)
出处 《半导体技术》 CAS 北大核心 2023年第1期48-53,共6页 Semiconductor Technology
关键词 GaAs赝配高电子迁移率晶体管(PHEMT) 超宽带 多通道滤波器 带通滤波器 开关滤波器组 单片微波集成电路(MMIC) GaAs pseudomorphic high electron mobility transistor(PHEMT) ultra-wideband multi-channel filter band-pass filter switching filter bank monolithic microwave integrated circuit(MMIC)
作者简介 王胜福(1981-),男,河北唐山人,高级工程师,主要从事各类射频/微波无源电路及相关产品的研究。
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