摘要
A memristor is a promising candidate of new electronic synaptic devices for neuromorphic computing.However,conventional memristors often exhibit complex device structures,cumbersome manufacturing processes,and high energy consumption.Graphene-based materials show great potential as the building materials of memristors.With direct laser writing technology,this paper proposes a lateral memristor with reduced graphene oxide(rGO)and Pt as electrodes and graphene oxide(GO)as function material.This Pt/GO/rGO memristor with a facile lateral structure can be easily fabricated and demonstrates an ultra-low energy consumption of 200 nW.Typical synaptic behaviors are successfully emulated.Meanwhile,the Pt/GO/rGO memristor array is applied in the reservoir computing network,performing the digital recognition with a high accuracy of 95.74%.This work provides a simple and low-cost preparation method for the massive production of artificial synapses with low energy consumption,which will greatly facilitate the development of neural network computing hardware platforms.
基金
supported by the Science and Technology Commission of Shanghai Municipality(21DZ1100500)
the Shanghai Municipal Science and Technology Major Project,the Shanghai Frontiers Science Center Program(2021-2025 No.20)
the Zhangjiang National Innovation Demonstration Zone(ZJ2019-ZD-005)
the National Key Research and Development Program of China(2021YFB2802000)
the National Natural Science Foundation of China(61975123 and 62105206)
China Postdoctoral Science Foundation(2021M692137)。
作者简介
Corresponding author:Qiming Zhang,email:qimingzhang@usst.edu.cn;Corresponding author:Min Gu,email:gumin@usst.edu.cn。
