摘要
对分子束外延(MBE)生长的原位As掺杂HgCdTe外延材料的热退火造成的As扩散控制进行研究。在较低的退火温度下获得了As扩散长度可控的HgCdTe材料,易于形成符合设计参数的PN结轮廓,为后续新型焦平面器件的研发提供基础。研究发现,在热退火过程中,原位As掺杂HgCdTe的As浓度的大小和纵向分布随着不同的Hg分压而发生改变。并通过理论计算获得了不同Hg分压下的As扩散系数。同时,通过数值模拟对不同As扩散长度的P-on-N器件结构进行了暗电流模拟,验证了As掺杂结深推进工艺的重要性。
As diffusion control caused by the thermal annealing of in-situ As-doped HgCdTe grown by molecular beam epitaxy(MBE)was studied.HgCdTe with controllable As diffusion length is obtained at a lower annealing tempera-ture,which is easy to form a PN junction profile that meets the design parameters.It provides a basis for the subsequent development of new HgCdTe FPA devices.It is found that the longitudinal distribution of As concentration of the in-situ As-doped HgCdTe changed under different Hg pressures during the thermal annealing process.And through theoretical calculations,As diffusion coefficients under different Hg pressures are obtained.Meanwhile,the dark current simula-tion of HgCdTe P-on-N structure with different As diffusion lengths was carried out through numerical simulation,which verified the importance of deep-advancing process for As-doped HgCdTe PN junction.
作者
沈川
杨辽
刘仰融
卜顺栋
王高
陈路
何力
SHEN Chuan;YANG Liao;LIU Yang-Rong;BU Shun-Dong;WANG Gao;CHEN Lu;HE Li(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2022年第5期799-803,共5页
Journal of Infrared and Millimeter Waves
基金
中国科学院青年创新促进会项目
上海市自然科学基金资助项目(21ZR1473500)。
关键词
碲镉汞
As扩散
热退火
暗电流
HgCdTe
As diffusion
thermal annealing
dark current
作者简介
沈川(1985-),副研究员,博士,主要研究领域为HgCdTe材料结构设计、生长和器件工艺.E-mail:shenchuan@mail.sitp.ac.cn;通讯作者:陈路,E-mail:chenlu@mail.sitp.ac.cn。
