摘要
当带电物体靠近电子设备时,会产生静电放电(ESD)现象,对电子设备造成干扰。提出一种频域测量的新方法来估计系统级静电放电耦合的功率,受试设备的Z参数由测量(仿真)得到,再经过推导得到系统级的功率耦合函数,并与全波模型和等效电路电路模型的仿真结果进行比较。结果表明提出的频域分析方法得到的耦合功率与仿真结果具有良好的一致性,该测量方法可以有效地对静电耦合功率进行分析,避免电子系统建模,对电子系统的设计有一定指导意义。
Electrostatic discharge( ESD) occurs when charged objects are close to electronic devices,causing interference to electronic devices.This paper proposes a new method of frequency domain measurement to estimate the power of system-level ESD coupling.The Z parameters of the tested device are obtained from the measurement( simulation),and then the system-level power coupling function is derived and compared with the simulation results of the full-wave model and the equivalent circuit circuit model.Results show that the coupling power obtained by the proposed method of frequency domain analysis is in consistency with the simulation results,and the measurement method can effectively analyze the electrostatic coupling power and avoid the electronic system modeling,which has some guiding significance for the design of electronic systems.
作者
魏鹏辉
雷雪
徐志坚
刘铮
WEI Penghui;LEI Xue;XU Zhijian;LIU Zheng(Information Engineering University,Zhengzhou 450001,China)
出处
《信息工程大学学报》
2022年第4期385-391,414,共8页
Journal of Information Engineering University
基金
国家自然科学基金资助项目(61871405)。
关键词
静电放电
耦合回路
功率分析
全波仿真
electrostatic discharge
coupling path
power analysis
full-wave simulation
作者简介
魏鹏辉(1996-),男,硕士生,主要研究方向为电磁兼容。
