摘要
基于0.18μm CMOS工艺,采用浅槽隔离(STI)注入法对1.8 V LVNMOS器件进行总剂量加固,并对比分析了^(60)Co(315 keV)与X射线(40 keV)辐照源对LVNMOS器件总剂量特性的影响。研究结果表明,在相同偏置条件下,^(60)Co与X射线两种辐照源对MOS器件的辐射电离效应具有一定的差异性,前者同时具有康普顿效应和光电效应,后者是光电效应,主要是光子与内层电子作用。由LVNMOS总剂量辐照特性推测,X射线辐照源引起LVNMOS的SiO_(2)层中产生的电子与空穴高于^(60)Co。
The total ionizing dose of 1.8 V LVNMOS devices is reinforced by shallow trench isolation(STI)injection method based on 0.18μm CMOS process,and the effects of ^(60)Co(315 keV)and X-ray(40 keV)irradiation sources on the total ionizing dose characteristics of LVNMOS devices are compared and analyzed.The results show that the effects of the ionizing radiation caused by ^(60)Co and X-ray irradiation sources on MOS devices are different under the same bias condition.The former can form both Compton effect and photoelectric effect,and the latter mainly arises the photoelectric effect,which is from the interaction between photons and inner electrons.From the total ionizing dose characteristics of LVNMOS,it can be inferred that the electrons and holes produced in the SiO_(2) layer of LVNMOS caused by X-ray irradiation source are higher than those by ^(60)Co.
作者
陶伟
刘国柱
宋思德
魏轶聃
赵伟
TAO Wei;LIU Guozhu;SONG Side;WEI Yidan;ZHAO Wei(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,China)
出处
《电子与封装》
2022年第7期64-68,共5页
Electronics & Packaging
基金
国家自然科学基金面上项目(62174150)
江苏省自然科学基金面上项目(BK20211040)。
作者简介
陶伟(1978-),男,江苏盐城人,硕士,高级工程师,主要研究方向为抗辐射超大规模集成电路,E-mail:twputin@sina.com;通信作者:刘国柱(1980-),男,江苏盐城人,博士,高级工程师,主要研究方向为抗辐射超大规模集成电路,gzliuuestc@126.com。
