摘要
Photo-induced vacancy defects are employed strategically to imbue semiconductors with enhanced performance characteristics for many important applications such as surface-enhanced Raman scattering(SERS)sensing,photocatalysis,and photovoltaic applications.However,the long-term maintenance and use of photo-induced vacancy defects remain elusive,because of their rapid self-healing upon air exposure.In this study,we demonstrate that photo-induced oxygen vacancy(PIVO)defects can be stabilized by the photoexcitation of metal–organic framework(MOF)materials,which is crucial for SERS analysis.The PIVO defects in MOF materials are stable for at least two weeks in the ambient atmosphere,owing to the combination of steric hindrance and electron delocalization around vacancy defects,which significantly contrasts the short lifetime(within minutes)of PIVO defects in metal-oxide semiconductors.With the formation of stable PIVO defects,a prominent SERS enhancement surpassing that of pristine MOFs is achieved,accompanied with a reduced limit of detection by three orders of magnitude.Moreover,the additional SERS enhancement rendered by PIVO defects can be stably retained and is effective for monitoring various small molecules,such as dopamine and bisphenol A.
基金
supports from the National Key Research and Development Program of China(No.2020YFB1505703)
This work was supported by the National Natural Science Foundation of China(Nos.52172299,22175198,51772319,51772320,and 51972331)
Z.G.Z would like to acknowledge the support from the External Cooperation Program of the Chinese Academy of Sciences(No.121E32KYSB20190008)
Six Talent Peaks Project of Jiangsu Province(No.XCL-170)
S.C would like to acknowledge the support from the Youth Innovation Promotion Association,CAS(No.2018356)
the Outstanding Youth Fund of Jiangxi(No.20192BCBL23027).
作者简介
Address correspondence to:Shan Cong,scong2012@sinano.ac.cn;Address correspondence to:Zhigang Zhao,zgzhao2011@sinano.ac.cn。
