摘要
从SiO_(2)/SiC界面工艺技术角度着重介绍了其降低界面态密度、提升沟道电子迁移率及改善SiC MOSFET性能稳定性的机理,分析了国内外研究中有关SiC材料、SiC晶面、氧化层制备工艺和氧化后退火(POA)条件对SiO_(2)/SiC界面的影响,总结了近年来提升SiO_(2)/SiC界面性能的研究进展。最后分析了多种降低界面态密度的工艺方法及其优缺点,指出了未来通过结合这些工艺方法进一步改善界面质量的发展方向。
The mechanisms of reducing the interface state density,improving the channel electron mobility and improving the performance stability of SiC MOSFETs are emphatically introduced from the perspective of SiO_(2)/SiC interface process.The effects of SiC material,SiC crystal plane,oxidation layer preparation process and post-oxidation annealing(POA)conditions on SiO_(2)/SiC interface from the research at home and abroad are analyzed.The research progress of improving the performances of SiO_(2)/SiC interface in recent years is summarized.Finally,the advantages and disadvantages of several process methods of reducing the interface state density are analyzed,and the development direction of further improving the interface quality by combining these methods is pointed out.
作者
刘佳霖
刘英坤
Liu Jialin;Liu Yingkun(The 13^(th) Research Institute,CETC,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2022年第5期346-353,共8页
Semiconductor Technology
关键词
SIC
界面态密度
沟道电子迁移率
晶面选择
氧化层制备工艺
氧化后退火(POA)
SiC
interface state density
channel electron mobility
crystal plane selection
oxidation layer preparation process
post-oxidation annealing(POA)
作者简介
刘佳霖(1997-),男,吉林长春人,硕士研究生,主要研究方向为碳化硅电力电子器件;刘英坤(1965-),男,河北新乐人,博士,研究员,硕士生导师,长期从事微波功率器件、半导体分立器件及微电子工艺技术研究。
