摘要
为了降低低噪声放大器(Low Noise Amplifier,LNA)的噪声系数(Noise Figure,NF),提出了一种LNA衬底电阻噪声抑制方法。根据金属-氧化物半导体场效应晶体管(Metal-Oxide Semiconductor,MOS)的衬底寄生电阻在源衬电容间产生噪声电流的原理,利用MOS管衬底电阻的小信号模型得出衬底噪声电流在大于一定的衬底电阻阻值时存在反比关系,采用增大衬底电阻阻值方法来降低MOS管衬底电阻噪声,从而减小整体LNA的噪声系数。将此方法应用于共栅级、电阻负反馈共源级与源简并电感型共源级等3种LNA中,采用台积电0.18μm互补金属氧化物半导体工艺设计,仿真结果表明,应用降噪技术后,共栅级、源简并电感型共源级和电阻负反馈型共源级LNA的NF最高降幅分别为0.99 dB、1 dB与1.18 dB。所提方法能够有效降低LNA的NF,并且提高3种LNA的线性度。
In order to reduce the noise figure of low noise amplifier(LNA),a LNA substrate resistance noise suppression technique is proposed.According to the principle that the substrate parasitic resistance of the metal-oxide semiconductor(MOS)transistor produces noise current between the source substrate capacitors,and through the small signal model of the substrate resistance of the MOS transistor,it is concluded that the substrate noise current is inversely proportional when the substrate resistance is greater than a certain value of the substrate resistance.A technique is studied to increase the substrate resistance to reduce the noise effect of the MOS substrate resistance,so as to reduce the noise figure of the whole LNA.This noise reduction technology is applied to three kinds of LNA:common gate level,resistance negative feedback common source level and source degenerate inductance common source level.All of them are designed in Taiwan semiconductor manufacturing company(TSMC)0.18μm CMOS process.The simulation results show that,compared with not using this noise reduction technology,the maximum NF reduction of common gate level LNA,source degenerate inductance common source level LNA and resistance negative feedback common source level LNA is 0.99 dB,1 dB and 1.18 dB,respectively.The proposed technology can effectively reduce the NF of LNA,and this technology improves the linearity of three kinds of LNA.
作者
黄东
陈志达
龚泽鹏
吕晓哲
苗瑞霞
HUANG Dong;CHEN Zhida;GONG Zepeng;LYU Xiaozhe;MIAO Ruixia(School of Electronic Engineering,Xi’an University of Posts and Telecommunications,Xi’an 710121,China)
出处
《西安邮电大学学报》
2022年第1期53-59,共7页
Journal of Xi’an University of Posts and Telecommunications
基金
陕西省自然科学基础研究计划项目(2020JQ-845)。
作者简介
黄东(1988—),男,博士,讲师,从事模拟、射频集成电路设计和研究工作,E-mail:hxd82@mail.ustc.edu.cn;陈志达(1997—),男,硕士研究生,研究方向为模拟、射频集成电路设计,E-mail:czd15592611851@163.com。
