摘要
Metal-semiconductor diodes constructed from two-dimensional(2D)van der Waals heterostructures show excellent gate electrostatics and a large built-in electric field at the tunnel junction,which can be exploited to make highly sensitive photodetector.Here we demonstrate a metal-semiconductor photodiode constructed by the monolayer graphene(Gr)on a few-layer black phosphorus(BP).Due to the presence of a built-in potential barrier(~0.09±0.03 eV)at the Gr-BP interface,the photoresponsivity of the Gr-BP device is enhanced by a factor of 672%,and the external quantum efficiency(EQE)increases to648%from 84%of the bare BP.Electrostatic gating allows the BP channel to be switched between p-type and n-type conduction.We further demonstrate that excitation laser power can be used to control the current polarity of the Gr-BP device due to photon-induced doping.The versatility of the Gr-BP junctions in terms of electrostatic bias-induced or light-induced switching of current polarity is potentially useful for making dynamically reconfigurable digital circuits.
基金
the financial support provided by the Fundamental Research Funds for the Central Universities(Nos.NS2020008,NC2018001,NJ2020003,NZ2020001)
the Program for Innovative Talents and Entrepreneur in Jiangsu,Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures(Nos.MCMS-I-0419G02,MCMS-I-0421K01)
National Key Research and Development Program of China(No.2019YFA0705400)
Australian Research Council Future Fellowship(No.FT160100205)
DECRA Fellowship(No.DE200101622)。
作者简介
Corresponding authors:Yanpeng Liu,contributed equally to this work.E-mail addresses:chmliuyp@nuaa.edu.cn;Ming Yang,contributed equally to this work;Junpeng Lu,contributed equally to this work;Corresponding authors:Kian Ping Loh.E-mail addresses:chmlohkp@nus.edu.sg.
