摘要
建立了非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(thin-film transistor,简称TFT)的仿真模型,仿真分析了IGZO半导体层带尾态密度和沟道层厚度两个参数对IGZO TFTs特性的影响规律.研究结果表明,当半导体层带尾态密度增加到1.5×10^(19)cm^(-3)·eV^(-1)及以上时,器件电学特性受深陷阱态影响劣化,亚阈值摆幅增加;沟道层薄膜厚度较小(<40 nm)时,器件的转移特性良好,当沟道层薄膜厚度超过40 nm时,器件的电学特性劣化,关态电流增加,开关比降低,亚阈值摆幅增加.本工作数值仿真分析方法可为设计制备IGZO TFTs提供一定的理论基础和实验指导.
A simulation model of amorphous indium-gallium-zinc-oxide(a-IGZO)thin-film transistor(TFT)was established,and the influences of two parameters including channel band tail state density and channel layer thickness on the characteristics of the a-IGZO TFTs were simulated and analyzed.The results show that when the density of tail states in the active channel increases to 1.5×10^(19)cm^(-3)·eV^(-1),the device performances deteriorate with increased subthreshold swing.The results also show that with channel layer thickness below 40 nm,the TFTs show good transfer characteristics,whereas the TFTs with channel layer thickness over 40 nm show deteriorated performances with increased off-state current,decreased on/off current ratio,and increased subthreshold swing.The numerical simulation analysis method of this work can provide theoretical basis and experimental guidance for design and fabricate of a-IGZO TFTs.
作者
李玲
孟令国
辛倩
LI Ling;MENG Lingguo;XIN Qian(School of Microelectronics,Shandong University,Jinan 250101,China)
出处
《微电子学与计算机》
2022年第1期95-100,共6页
Microelectronics & Computer
基金
国家自然科学基金(62074094)
山东省自然科学基金(ZR2020ZD03,ZR2018MF029)
山东大学青年学者未来计划基金(2016WLJH44)。
关键词
非晶铟镓锌氧化物
薄膜晶体管
尾态密度
沟道厚度
仿真
amorphous indium-gallium-zinc-oxide(a-IGZO)
thin-film transistors(TFTs)
band tail state density
channel layer thickness
simulation
作者简介
李玲,女,(1972-),博士,讲师.研究方向为薄膜晶体管器件和电路;孟令国,男,(1978-),博士,副教授.研究方向为新型显示材料、器件及智能系统;通讯作者:辛倩,女,(1982-),博士,副教授.研究方向为半导体材料与器件.E-mail:xinq@sdu.edu.cn。
