摘要
针对聚焦离子束在绝缘材料表面直写微纳图形时因电荷积聚原因导致加工效果差的情况,将单晶硅湿法各向异性腐蚀工艺应用于单晶硅片表面制备倒金字塔形通孔,作为微窗硅基盖板覆盖于绝缘衬底表面。当聚焦离子束穿过通孔在非导电衬底表面进行溅射刻蚀时,微窗硅基盖板的导电特性可提高溅射出的带电粒子的迁移率,降低电荷积聚-放电的频率,从而有助于聚焦离子束在绝缘衬底表面进行微纳加工。试验在具备高分辨率扫描电子显微镜成像和聚焦离子束微纳加工功能的双束系统中进行。试验结果显示被微窗硅基盖板的通孔环绕的石英表面的刻蚀结果与未被环绕的对比,刻蚀效果有显著改善,甚至部分刻蚀结果与单晶硅表面的刻蚀结果一致。
This paper is dedicated to promote milling efficienty which is decrased by charged particles on dielectric.Silicon cover plate with inverted pyramidal shaped through-holes as a silicon through hole of micro-window is prepared by anisotropic wet etching of single crystal on the surface of the single crystal silicon substrate.After covering the surface of the dielectric substrate with the cover plate,the conductive properties of the micro-window silicon cover plate can increase the mobility of the sputtered charged particles,and dissipate them in order to decrease charging-discharging frequency.This is an efficient method for improving milling efficiency of focused ion beam micro-nanofabrication.The experiment is carried out in a dual beam system(SEM-FIB).The experiment results show that by using the silicon cover plate of micro-window,significantly more efficient structural characteristics areobserved in areas of silicon dioxide surrounded by silicon through hole of micro-window compared to areas with no covering,and even some of structural characteristics are consistent to those milled in single crystal silicon surface.
作者
王伟
庞陈雷
杨青
佘玄
吴兰
李强
WANG Wei;PANG Chenlei;YANG Qing;SHE Xuan;WU Lan;LI Qiang(State Key Laboratory of Modern Optical Instrumentation,College of Optical Science and Engineering,Zhejiang University,Hangzhou 310027;Research Center for Smart Sensing,Zhejiang Lab,Hangzhou 311121,China)
出处
《实验室研究与探索》
CAS
北大核心
2021年第9期61-65,共5页
Research and Exploration In Laboratory
关键词
微纳加工
聚焦离子束
绝缘电介质
微窗硅基盖板
倒金字塔通孔
micro-nanofabrication
focused ion beam(FIB)
dielectric
silicon through hole of micro-window
inverted pyramidal shaped through-hole
作者简介
王伟(1985-),女,山东济南人,博士,实验师,现主要从事微纳加工研究。Tel.:0571-87953365,E-mail:wangwei77@zju.edu.cn。