摘要
光刻是指通过紫外光曝光将掩膜图形转移到基底表面光刻胶上的工艺,是微纳加工制造中最关键的技术之一。1952年,光刻被首次用于集成电路的制造,自此信息技术得到了飞速发展。光刻工艺是芯片制造中难度最大、耗时最久的工艺,成本约占整个芯片生产成本的1/3。在整个光刻工艺中,光刻机是核心要素,光刻胶则是实现精细图形加工制备集成电路的关键材料。光刻工艺的发展主要依靠光源波长的不断缩小,从g线(436 nm)、i线(365 nm)、KrF(248 nm)、ArF(193 nm)再到如今的极紫外(EUV,13.5 nm),集成电路的制程工艺在不断进步,光刻胶也随之不断更新换代。
Photolithography is the process which transfers the mask pattern onto the photoresist layer on the substrate through ultraviolet(UV)irradiation,and is one of the most critical techniques for nanofabrication.Since the implementation of photolithography on the production of integrated circuits(IC)in 1952,information technologies have witnessed a rapid development.Photolithography is the most difficult and time-consuming step in IC fabrication and it takes up to 1/3 of the production cost.In the whole process,the mask aligner is the core element while photoresist is the key materials to realize the fabrication of fine nanostructures.The development of the photolithography process mainly depends on the shortening of the wavelength of the light sources,from g-line(436 nm),i-line(365 nm),KrF(248 nm),ArF(193 nm)and then to extreme UV(EUV)(13.5 nm).The development of the IC fabrication process is also accompanied by the upgrade of the photoresist.
作者
季生象
JI Sheng-Xiang(Key Laboratory of Polymer Ecomaterials,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun 130022,China)
出处
《应用化学》
CAS
CSCD
北大核心
2021年第9期1027-1028,共2页
Chinese Journal of Applied Chemistry
作者简介
季生象,Guest editor,e-mail:sji@ciac.ac.cn。
