摘要
A nano-twinned microstructure was found in amorphous SiC after high-temperature annealing.Grazing incidence x-ray diffraction,high-resolution transmission electron microscopy,and electron diffraction were performed to characterize the microstructure and phase transition in the recrystallization layer.After 1500℃or 2-h annealing,3C-SiC grains and numerous stacking faults on the{111}planes were visible.Some 3C-SiC grains have nano-twinned structure with{011}planes.Between the nano-twinned 3C-SiC grains,there is a stacking fault,indicating that the formation mechanisms of the nano-twinned structure are related to the disorder of Si atoms.The increase in the twin thickness with increasing annealing temperature demonstrates that the nano-twinned structure can sink for lattice defects,in order to improve the radiation tolerance of SiC.
作者
Zheng Han
Xu Wang
Jiao Wang
Qing Liao
Bingsheng Li
韩铮;王旭;王娇;廖庆;李炳生(Nuclear Power Institute of China,Chengdu 610200,China;Sichuan Vocational and Technical College of Communications,Chengdu 611130,China;State Key Laboratory for Environment-friendly Energy Materials,Southwest University of Science and Technology,Mianyang 621010,China)
基金
Project supported by the National Natural Science Foundation of China(Grant No.12075194)
Sichuan Science and Technology Program(Grant No.2020ZYD055)。
作者简介
Corresponding author:王旭.E-mail:wcici2018@126.com;Corresponding author:李炳生.E-mail:libingshengmvp@163.com。
