摘要
Semiconductor InSb microcrystallites were embedded in SiO_(2) thin films by rf cosputtering technique.Structures of the thin films were characterized by transmission electron microscopy,x-ray diffraction,and x-ray photoelectron spectroscopy.Average size of the microcrystallites,depending on post-annealing temperature and time,is on the order of magnitude of nanometer.Absorption spectra of the films were measured and large blue shifts of absorption edge were observed in a wide range from 300 to 1500nm.The blue shifts were attributed to the quantum confinement effect and explained in the model of effective-mass approximation.
