摘要
We fabricate N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and pentacene heterostructure organic field effect transistors with a MoO_(3) ultrathin layer between Al source-drain electrode and active layer.By inserting the MoO_(3) layer,the injection barrier of hole carriers is lowered and the contact resistance is reduced.Thus,the performance of the device is improved.The device shows typical ambipolar transport characteristics with effective hole mobility of 4.838×10^(-3) cm^(2)/V·s and effective electron mobility of 1.909×10^(-3) cm^(2)/V·s,respectively.This result indicates that using a MoO_(3) ultrathin 1ayer is an effective way to improve the performance of ambipolar organic field effect transistors.
作者
TIAN Hai-Jun
CHENG Xiao-Man
ZHAO Geng
LIANG Xiao-Yu
DU Bo-Qun
WU Feng
田海军;程晓曼;赵赓;梁晓宇;杜博群;吴峰(Institute of Material Physics,Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),and Tianjin Key Laboratory of Photoelectric Materials and Devices,Tianjin University of Technology,Tianjin 300384;School of Science,Tianjin University of Technology,Tianjin 300384)
基金
Supported by the Natural National Science Foundation of China under Grant No 61076065
the Natural Science Foundation of Tianjin(No 07JCYBJC12700).
作者简介
Corresponding author:程晓曼,Email:chengxm@tjut.edu.cn。
