摘要
Lithium niobate on insulator(LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication of on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 d B/cm in the communication band was achieved in the fabricated waveguide amplifiers under the pump of a974 nm continuous laser. This work develops new active devices on LNOI and may promote the development of LNOI integrated photonics.
作者
Qiang Luo
Chen Yang
Zhenzhong Hao
Ru Zhang
Dahuai Zheng
Fang Bo
Yongfa Kong
Guoquan Zhang
Jingjun Xu
罗强;杨晨;郝振中;张茹;郑大怀;薄方;孔勇发;张国权;许京军(MOE Key Laboratory of Weak-Light Nonlinear Photonics,TEDA Institute of Applied Physics and School of Physics,Nankai University,Tianjin 300457,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China;Collaborative Innovation Center of Light Manipulations and Applications,Shandong Normal University,Jinan 250358,China)
基金
supported by the National Key Research and Development Program of China(No.2019YFA0705000)
the National Natural Science Foundation of China(Nos.12034010,11734009,92050111,92050114,12074199,12004197,and 11774182)
the Higher Education Discipline Innovation Project(No.B07013)
the Program for Changjiang Scholars and Innovative Research Team in University(PCSIRT)(No.IRT_13R29)。
作者简介
Corresponding author:薄方,bofang@nankai.edu.cn;Corresponding author:孔勇发,kongyf@nankai.edu.cn;Corresponding author:张国权,zhanggq@nankai.edu.cn;Corresponding author:许京军,jjxu@nankai.edu.cn。
