摘要
A Gunn active layer is used as an X electron probe to detect the X tunnelling current in the GaAs--AlAs heterostructure,from which a new heterostructure intervalley transferred electron(HITE)device is obtained.In the 8 mm band,the highest pulse output power of these diodes is 2.65 W and the highest conversion efficiency is 18%.The dc and rf performance of the HITE devices was simulated by the band mixing resonant tunnelling theory and Monte Carlo transport simulation.The HITE effect has transformed the transit-time dipole-layer mode in the Gunn diode into a relaxation oscillation mode in the HITE device.From the comparison of simulated results to the measured data,the HITE effect is demonstrated straightforwardly.
作者
XUE Fang-Shi
薛舫时(National Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;Nanjing Electronic Devices Institute,Nanjing 210016(mailing address))
基金
Support of the National Natural Science Foundation of China under Grant No.69676022.
