摘要
The performance of polymer field-effect transistors is improved by thermal crosslinking of poly(3-hexylthiophene),using ditert butyl peroxide as the crosslinker.The device performance depends on the crosslinker concentration significantly.We obtain an optimal on/off ratio of 105 and the saturate field-effect mobility of 0.34 cm2V−1s−1,by using a suitable ratios of ditert butyl peroxide,0.5 wt%of poly(3-hexylthiophene).The microstructure images show that the crosslinked poly(3-hexylthiophene)active layers simultaneously possess appropriate crystallinity and smooth morphology.Moreover,crosslinking of poly(3-hexylthiophene)prevents the transistors from large threshold voltage shifts under ambient bias-stressing,showing an advantage in encouraging device environmental and operating stability.
作者
JIANG Chun-Xia
YANG Xiao-Yan
ZHAO Kai
WU Xiao-Ming
YANG Li-Ying
CHENG Xiao-Man
WEI Jun
YIN Shou-Gen
姜春霞;杨小艳;赵恺;吴晓明;杨利营;程晓曼;魏军;印寿根(Key Laboratory of Display Materials and Photoelectric Devices(Ministry of Education),Tianjin University of Technology,Tianjin 300384;Institute of Material Physics,and Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology,Tianjin 300384;Singapore Institute of Manufacturing Technology,71 Nanyang Drive,Singapore)
基金
by the National Natural Science Foundation of China under Grant Nos 60676051,60876046,60976048 and 61076065,Tianjin Natural Science Foundation(06TXTJJC14603,07JCYBJC12700)
Key Project of the Ministry of Education of China(209007)
Tianjin Natural Science Council(10ZCKFGX01900)
Scientific Developing Foundation of Tianjin Education Commission(20100723)
the Tianjin Key Discipline of Material Physics and Chemistry.
作者简介
Corresponding author:印寿根.Email:sgyin@tjut.edu.cn。
