摘要
利用甚高频等离子体增强化学气相沉积技术,在不同CH_(4)流量下制备非晶SiC_(x)∶H薄膜,在室温下能用肉眼观察到薄膜较强的近红外光发射,并研究其光发射机制。荧光稳态和瞬态光谱分析表明,在不同波长激发下,薄膜的发光光谱谱形及峰位未发生明显变化,并且薄膜的荧光寿命在1~1.5ns之间。经过1100℃退火处理后,随薄膜中硅团簇的析出其发光基本淬灭,研究认为非晶SiC_(x)∶H薄膜的近红外光发射主要源于薄膜中的Si悬键缺陷态发光中心。
Amorphous silicon carbide(a-SiC_(x):H)films that displayed near-infrared luminescence were prepared at different methane flow rates by using very high frequency-plasma enhanced chemical vapor deposition technique.Interestingly,the near-infrared light emissions from the a-SiC_(x):H films were perceptible to the naked eye in a bright room.The photoluminescence from the a-SiC_(x):H films featured an excitation wavelength independent recombination dynamic on a nanosecond timescale.Moreover,it is found that the PL intensity dropped dramatically with the formation of Si clusters after the film annealed at 1100℃.The origin of the near-infrared light emission observed from the a-SiC_(x):H films is suggested mainly from silicon dangling defect centers.
作者
林淑地
邹森强
黄紫珊
吴海霞
林圳旭
黄锐
宋捷
LIN Shudi;ZOU Senqiang;HUANG Zishan;WU Haixia;LIN Zhenxu;HUANG Rui;SONG Jie(School of Materials Science and Engineering,Hanshan Normal University,Chaozhou 521041,China)
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2021年第3期492-495,526,共5页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目(61274140)
广东省自然科学基金资助项目(2015A030313871)
广东省普通高校青年创新人才资助项目(2016KQNCX100)。
关键词
近红外发光
非晶碳化硅
光致发光
等离子体增强化学气相沉积
Near-infrared luminescence
Amorphous silicon carbide
Photoluminescence
Plasma enhanced chemical vapor deposition
作者简介
林淑地(1997-),研究方向:半导体光电子材料。E-mail:2361062019@163.com;通讯作者:宋捷(1980-),讲师,硕士研究生,研究方向:半导体光电子材料。E-mail:songjie@hstc.edu.cn。
