摘要
本研究基于ZnO制备了一种全光控忆阻器,短波光照射可增大器件电导,长波光则可降低电导,并且电导态可以长时间保持。因此,通过改变施加光信号的波长,可实现忆阻器电导的可逆调控。基于以上特性,该器件可以模拟突触基本功能,包括长程增强与长程抑制、光功率密度依赖可塑性、频率依赖可塑性以及学习-遗忘-再学习的经验学习行为。与电相比,光具有高带宽、低串扰、速度快等优势,并且不改变器件微结构,因此全光控忆阻器有望应用于类脑智能系统的构建。
An all-optically controlled memristor is prepared based on ZnO.It is found that light irradiation of the memristor with short wavelengths results in an increase in device conductance and long wavelength light irradiation leads to a decrease in the conductance.Then,the device conductance can be tuned reversibly by only varying the wavelength of the controlling light.The conductance states are nonvolatile.Based on the above characteristics,the device can be employed to emulate the synaptic plasticity,including long-term potentiation and long-term depression,light power density-dependent plasticity,frequency-dependent plasticity,and experiential learning behavior of learning-forgetting-relearning.Compared with electricity,light has some advantages,such as high bandwidth,low crosstalk and fast speed.In addition,light irradiation does not induce microstructure change.Therefore,this all-optically controlled memristor has a great application potential in constructing brain-inspired intelligent systems.
作者
杨静
卢焕明
叶羽敏
诸葛飞
YANG Jing;LU Huanming;YE Yumin;ZHUGE Fei(School of Materials Science and Chemical Engineering,Ningbo University,Ningbo 315211,China;Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China;Center for Excellence in Brain Science and Intelligence Technology,Chinese Academy of Sciences,Shanghai 200031,China)
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2021年第3期393-397,共5页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目(U20A20209,61874125)
浙江省自然科学基金资助项目(LD19E020001)。
关键词
忆阻器
全光控
ZNO
突触可塑性
Memristor
All-optically controlling
ZnO
Synaptic plasticity
作者简介
杨静(1995-),女,硕士研究生,研究方向:低维半导体材料与器件;通讯作者:诸葛飞,男,研究员,博士生导师,主要从事低维半导体材料与器件的研究。E-mail:zhugefei@nimte.ac.cn。
