摘要
基于0.15μm GaAs pHEMT工艺,设计了一种自混频三倍频器,实现了将X波段信号倍频为Ka波段信号。仿真结果表明,该三倍频器的相对带宽为16%,频率覆盖范围为8.9~10.5 GHz,涵盖了大部分的X波段。当输入信号为0 dBm时,在9.5 GHz频点处的输出功率为-12 dBm。在带宽范围内,谐波抑制比大于15 dBc。采用渐变形电感,提高了电感的Q值,实现了去耦电容接地的无源Marchand巴伦。仿真结果表明,无源巴伦的相对带宽达到120%,幅值平衡度得到了有效提高。该三倍频器具有0.4 V、0.8 V、1 V三个直流偏置,芯片尺寸为1.9 mm×0.67 mm。
Based on 0.15μm GaAs pHEMT process,a self-mixing frequency-tripler was designed to convert X-band signal to Ka-band signal.The simulation results showed that,the relative bandwidth of the frequency-tripler was 16%,the frequency coverage was 8.9~10.5 GHz,covering the most of the X-band.When the input signal was 0 dBm,the output power could reach–12 dBm at 9.5 GHz.The harmonic suppression ratio was greater than 15 dBc within the bandwidth.The Q value of the inductor was optimized by using the gradual deformation inductor.A passive Marchand Balun grounded by decoupling capacitor was realized.The simulation results showed that the relative bandwidth of passive Balun reached 120%,which effectively increased the amplitude balance degree.The frequency-tripler had three DC biases of 0.4 V,0.8 V and 1 V,and the chip size was 1.9 mm×0.67 mm.
作者
何勇畅
毛小庆
陈志巍
喻青
曹军
高海军
HE Yongchang;MAO Xiaoqing;CHEN Zhiwei;YU Qing;CAO Jun;Gao Haijun(Key Laboratory for RF Circuits and Systems of Ministry of Education,Hangzhou Dianzi University,Hangzhou 310018,P.R.China)
出处
《微电子学》
CAS
北大核心
2020年第5期637-642,共6页
Microelectronics
基金
国家自然科学基金资助项目(61871161)。
作者简介
何勇畅(1995-),男(汉族),江苏高邮人,硕士研究生,研究方向为射频集成电路设计。
