摘要
采用KrF准分子激光辐照4H-SiC制备石墨烯层,从4H-SiC晶面取向对石墨烯生长质量影响的角度开展研究工作,分析激光能量密度、脉冲数及晶面取向对石墨烯质量的影响。当激光能量密度为1.06 J/cm^2,脉冲数为8000时,4H-SiC样品极性Si(0001)面和非极性a(11`20)面上生长的石墨烯质量均达到最好。石墨烯与4H-SiC衬底极性Si(0001)面之间存在缓冲层,为石墨烯的生长提供了模板,得到的石墨烯更为有序,缺陷态更少;而非极性a(11`20)面上生成的石墨烯与衬底之间未生成缓冲层,生长的石墨烯层较为无序,对激光参数的变化更为敏感。
In this paper,a KrF excimer laser is used to decompose 4H-SiC substrates to prepare graphene layers.The research is focused on the influence of the crystal orientation of 4H-SiC on the quality of the graphene produced.The effects of laser energy density,pulse number,and crystal orientation on graphene quality are analyzed.With a laser energy density of 1.06 J/cm^2 and a pulse number of 8000 shots,the graphene obtained on the polar Si-plane(0001)and on the non-polar a-plane(11`20)of the 4H-SiC sample are both of the best quality.We find that a buffer layer that provides a template for the growth of graphene is formed between Si-plane(0001)and 4H-SiC substrate.The graphene obtained from the buffer layer is consequently more ordered and has fewer defects.In contrast,there is no buffer layer between the photo-generated graphene on a-plane(11`20)and 4H-SiC substrate,which results in the generated graphene being disordered and more sensitive to the laser parameters.
作者
孙正阳
季凌飞
林真源
张彤
许园波
张犁天
Sun Zhengyang;Ji Lingfei;Lin Zhenyuan;Zhang Tong;Xu Yuanbo;Zhang Litian(Institute of Laser Engineering,Faculty of Materials and Manufacturing,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Trans-Scale Laser Manufacturing Technology of Ministry of Education,Beijing 100124,China)
出处
《中国激光》
EI
CAS
CSCD
北大核心
2020年第8期44-52,共9页
Chinese Journal of Lasers
基金
国家自然科学基金(51975017.51575013)
2018国家重点研发计划(2018YFB1107500)。
关键词
材料
石墨烯
4H-SIC
激光辐照
晶面指数
materials
graphene
4H-SiC
laser irradiation
indices of lattice planes
作者简介
季凌飞,E-mail:ncltji@bjut.edu.cn。
