摘要
In recent decades,dual-band photodetectors have received widespread attention due to better target iden-tification,which are considered as the development trend of next generation photodetectors.However,the traditional dual-band photodetectors based on heteroepitaxial growth,superlattice and multiple quantum well structures are limited by complex fabrication process and low integration.Herein,we report a UV/IR dual-band photodetector by integrating ultra-wide gap B-Ga2O,and narrow-gap black phosphorous(BP)nanoflakes.A vertical van der Waals(vdW)heterostructure is formed between BP and B-Ga,O,by mechanically exfoliated method integrated without the requirement of lattice match.The heterostructure devices show excellent rectification characteristics with high recti-fving ratio of ca.10 and low reverse current around pA.Moreover,the device displays obvious photoresponse underUV and IR irradiations with responsivities of 0.87 and 2.15 mA/W,respectively.We also explore the band alignment transit within the heterostructure photodetector at different bias voltages.This work paves the way for fabricating novel dual-band photodetectors by utilizing 2D materials.
基金
Supported by the National Natural Science Foundation of China(Nos.61922082,61875223,61927813)
the Natural Science Foundation of Jiangsu Province,China(No.BK20191195)
the National Key R&D Program of China(No.2016YEE0105700).
作者简介
The authors contributed equally to this work:LI Chang;The authors contributed equally to this work:XIE Liu;Corresponding author:ZHANG Kai.Email:kzhang2015@sinano.ac.cn。
