摘要
该文以厚膜组装VDMOS为对象进行功率循环试验,采用X射线、切金相剖面分析和热阻分析等方法对试验后样品进行了对比。分析厚膜组装各封装界面随时间的退化的特征,并分析了其退化机理。其次利用有限元分析法计算模块中各部分温度分布情况,最后结合Coffin-Manson关系外推不同温度变化条件下的循环次数。
Failure mechanism of hybrid integrated VDMOS is Analysed by active power circle accelerated life testing.Firtly,Inspect the degenerative phenomena of VDMOS by X-ray and cross section Analysis.Secondly,analysis the thermal resistance degeneration of VDMOS,analysis the temperature changes of packaging parts by Finite Element Method.A comparison of the solder joint lifetime was carried out between active power cycling based on Coffin-Manson model.
作者
汪张超
江国栋
吕红杰
何超
Wang Zhang-chao;Jiang Gou-dong;Lv Hong-jie;He Chao(East China Research Institute of Microelectronics,Anhui Hefei 230088)
出处
《电子质量》
2020年第5期35-40,共6页
Electronics Quality
作者简介
汪张超(1981-),男,安徽桐城人,硕士,高级工程师,研究方向为混合集成电路的可靠性。
