摘要
采用激光化学气相沉积法在Al2O3基底上以49μm·h-1的沉积速率高速制备了c-轴取向的YBa2Cu3O 7-δ薄膜,其中,激光功率为133 W,沉积温度1103 K,腔体压强800 Pa。研究了前驱体蒸发温度及薄膜退火温度对薄膜电学性能的影响。研究表明,Ba、Cu、Y前驱体加热温度分别为603、478、459 K时制备的薄膜在经813 K高温热处理12 h后,临界温度可达83 K。
c-axis-oriented YBa2 Cu 3O7-δfilm was prepared on Al2O3 substrates at a deposition rate of 49μm·h-1 by laser chemical vapor deposition at a laser power of 133 W,with corresponding deposition temperature of 1103 K and total pressure of 800 Pa.Effects of the evaporation temperature and annealing temperature on the electrical properties of the film were investigated.The YBa2Cu3O 7-δfilm showed a critical temperature of 83 K after heat-treated at 813 K for 12 h when the evaporation temperature of Ba,Cu,and Y precursors were 603 K,478 K,and 459 K,respectively.
作者
张琼
赵培
吴慰
戴武斌
GOTO Takashi
徐源来
ZHANG Qiong;ZHAO Pei;WU Wei;DAI Wubin;GOTO Takashi;XU Yuanlai(Hubei Key Laboratory of Plasma Chemistry and Advanced Materials(Wuhan Institute of Technology),Wuhan 430205,China;Institute for Materials Research,Northeastern University,Senyang 160001,China;Key Laboratory for Green Chemical Process of Ministry of Education(Wuhan Institute of Technology),Wuhan 430205,China)
出处
《材料科学与工艺》
EI
CAS
CSCD
北大核心
2020年第2期9-17,共9页
Materials Science and Technology
基金
国家自然科学基金(51972241).
作者简介
张琼(1995-),女,硕士研究生;通信作者:赵培,E-mail:zhaopei410@163.com。
