摘要
利用化学共沉淀法制备Zn2+共掺的Ce:GAGG陶瓷粉体。研究了Zn2+共掺的Ce:GAGG陶瓷前驱粉体的TG/DTA和FTIR曲线;分析了不同煅烧温度对Ce:GAGG陶瓷粉体相、形貌和颗粒度分布的影响;研究了Zn2+含量对Ce:GAGG陶瓷粉体光致发光,辐射发光,激发光谱和荧光寿命的影响。研究表明:前驱粉体在883℃的相组成为GdAlO3相和GAGG相;前驱粉体在煅烧温度为900℃时,完全转化为GAGG相;当煅烧温度为1200℃时,GAGG颗粒尺寸控制在20~60nm,分布均匀;随着Zn2+含量的变化,光致发光和辐射发光强度也相应变化,特别的,当Zn2+含量为0.4 mol%时,光致发光和辐射发光强度达到最大值;随着Zn2+掺杂含量的上升,荧光寿命出现下降的趋势。因此,Zn2+含量对Ce:GAGG陶瓷粉体的辐射发光具有明显的影响,对降低荧光寿命具有积极的作用,对于提高GAGG闪烁材料的快速响应具有重要意义。
Zinc co-doped Ce:Gd3Ga3Al2O12(Ce:GAGG) ceramic precursors were synthesized by chemical co-precipitation method. Thermogravimetric analysis and differential thermal analysis of the precursor powders were performed. The chemical molecule of precursors was analyzed by FTIR. The phases and morphology of the precursors at different calcination temperatures were studied by XRD and SEM. The results show that precursor powders consist of GdAlO3 and GAGG phases at 883 °C. Precursors completely convert to Ce:GAGG powders at 900 °C. The particles of Ce:GAGG powders calcined at 1200 °C range from 20 nm to 60 nm, and become homogeneous and smooth. The effect of polyethylene glycol(PEG) on the morphology of precursors was investigated. Particle size and size range of Ce:GAGG powders calcined at different temperatures were investigated. The influence of Zn2+ content on photoluminescence, radioluminescence, excitation spectra and fluorescent lifetime of Ce:GAGG was analyzed. The emission spectrum of Ce:GAGG co-doped with 0.4 mol% Zn2+ has the highest intensity. Zn2+ in Ce:GAGG powders has a positive effect on reducing the fluorescence lifetime.
作者
邱智华
张鲜辉
王帅华
吴少凡
林永红
Qiu Zhihua;Zhang Xianhui;Wang Shuaihua;Wu Shaofan;Lin Yonghong(Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China;University of the Chinese Academy of Sciences,Beijing 100049,China)
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2020年第3期761-768,共8页
Rare Metal Materials and Engineering
基金
National Key Research and Development Program of China(2017YFB1104504,2016YFB0701004)。
作者简介
邱智华,男,1990年生,硕士,中国科院福建物质结构研究所,福建福州350002,电话:0591-63179150,E-mail:qzh@fjirsm.ac.cn。
