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WS2/Zr复合涂层的制备及性能研究 被引量:1

Preparation and Properties of WS2/Zr Composite Coatings
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摘要 采用射频磁控溅射和直流磁控溅射两种不同的溅射工艺分别制备WS2涂层、金属靶材Zr,在YT15硬质合金基体上制备WS2/Zr复合涂层。借助扫描电子显微镜分析WS2/Zr复合涂层表面及断面的微观形貌,利用能谱仪(EDS)对复合涂层的成分及各沉积粒子的含量进行检测,通过X射线衍射仪(XRD)观测复合涂层的晶体结构生长的情况,并测试涂层的厚度、显微硬度及涂层与基体之间的结合力等,来探究WS2靶材溅射功率的变化对制备涂层性能的影响。结果表明:WS2靶材的溅射功率控制在90 W时,所制备的WS2/Zr复合涂层结构最为致密且晶体呈细化趋势,晶粒结构的生长体现为典型的WS2晶体择优生长取向,此时所制备涂层的厚度、显微硬度、涂层与基体结合力分别约为4.8μm、HV630、67 N。 WS2 coating and metal target Zr were prepared by RF magnetron sputtering and DC magnetron sputtering.WS2/Zr composite coating was prepared on YT15 cemented carbide substrate.The surface morphology and cross-section of the WS2/Zr composite coating were analyzed by scanning electron microscopy.The composition of the composite coating and the content of each deposited particle were detected by energy dispersive spectroscopy(EDS)and observed by X-ray difiraction(XRD).The crystal structure of the composite coating was grown,and the thickness of the coating,the microhardness and the bond between the coating and the substrate were tested to investigate the effect of the variation of the sputtering power of the WS2 target on the performance of the coating.The results show that when the sputtering power of WS2 target is controlled at 90 W,the prepared WS2/Zr composite coating has the most compact structure and the crystal refinement trend.The growth of grain structure is the typical growth orientation of typical WS2 crystal.The thickness,microhardness,and adhesion of the coating to the substrate prepared at this time were about 4.8 μm,HV630,and 67 N,respectively.
作者 夏国峰 杨学锋 王守仁 万壮 刘文波 李丹 XIA Guofeng;YANG Xuefeng;WANG Shouren;WAN Zhuang;LIU Wenbo;LI Dan(University of Jinan,School of Mechanical Engineering,Jinan 250022,Shandong,China)
出处 《陶瓷学报》 CAS 北大核心 2019年第5期589-596,共8页 Journal of Ceramics
基金 国家自然科学基金(51575234,51872122) 中国博士后科学基金(2017M620286) 山东省重点研发计划(2018CXGC0809) 山东省农机装备研发创新计划(2018YF012) 山东省泰山学者特聘专家
关键词 拉拔模具 WS2软涂层 磁控溅射 WS2/Zr复合涂层 drawing die WS2 soft coating magnetron sputtering WS2/Zr composite coating
作者简介 通信联系人:杨学锋(1977-),男,博士、教授。
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