摘要
通过拉曼光谱和光致发光光谱分别揭示了单层硒化钨在施加单轴拉伸应变情况下的带隙能量变化。应变可以诱导单层硒化钨由直接带隙半导体转变为间接带隙半导体,并且在整个应变范围内,直接带隙峰和间接带隙峰均出现明显的红移。应变还对晶格震动有影响,对面内震动模式E2g1观察到明显的峰分裂。这些发现丰富了对单层过渡金属二硫化物材料应变状态的理解。
The bandgap energy and phonon behavior of a monolayer of tungsten selenide under uniaxial tensile strain are revealed by photoluminescence( PL) spectroscopy and Raman spectroscopy respectively. Strain can induce monolayer tungsten selenide to be transformed from a direct bandgap semiconductor to an indirect bandgap semiconductor,and both the direct bandgap peak and the indirect bandgap peak exhibit a monotonic linear red shift over the entire strain range. The strain also has an effect on the lattice vibration,and a significant peak split is observed for the inplane vibration mode E2g1. These findings enrich understanding of the strain state of monolayer transition-metal dichalcogenide( TMD) materials.
作者
王倩倩
徐浩然
WANG Qianqian;XU Haoran(School of Electronics and Information Engineering, Shanghai University of Electric Power, Shanghai 200090, China)
出处
《上海电力学院学报》
CAS
2019年第2期193-196,共4页
Journal of Shanghai University of Electric Power
作者简介
通讯作者:王倩倩(1993-),女,在读硕士。主要研究方向为二维半导体。E-mail:regina_wong93@foxmail.com。
