摘要
Power conversion efficiency(PCE) of quantum dot-sensitized solar cells(QDSSCs) was boosted in a TiO_2 composite film(TCSF) with delicate design in structure where TiO_2 hierarchical porous film(THPF) situated on the top of TiO_2 nanorod arrays film(TNAF). In this case, TNAF could supply efficient scattering centers for high light harvesting and direct electrical pathways for fast electron transfer while the THPF could offer porous channels for loading high quantity of previously synthetized quantum dots(QDs) and facilitate the penetration of electrolyte. Meanwhile, in this specific configuration, the presence of anatase–rutile heterojunction at the interface could help the rutile TNAF layer to efficiently collect photo-injected electrons from the anatase THPF layer thus suppressing the recombination of electrons and holes in electrolyte. The results showed that the PCE of QDSSC based on the TNAF photoanode was about 1.4-fold higher(η = 3.05%, J_(sc)= 15.86 m A cm^(-2), V_(oc)= 0.602 V, FF = 0.319) than that of device based on pure THPF(η = 2.20%, J_(sc)= 13.82 m A cm^(-2), V_(oc)= 0.572 V, FF = 0.278).
Power conversion efficiency(PCE) of quantum dot-sensitized solar cells(QDSSCs) was boosted in a TiO_2 composite film(TCSF) with delicate design in structure where TiO_2 hierarchical porous film(THPF) situated on the top of TiO_2 nanorod arrays film(TNAF). In this case, TNAF could supply efficient scattering centers for high light harvesting and direct electrical pathways for fast electron transfer while the THPF could offer porous channels for loading high quantity of previously synthetized quantum dots(QDs) and facilitate the penetration of electrolyte. Meanwhile, in this specific configuration, the presence of anatase–rutile heterojunction at the interface could help the rutile TNAF layer to efficiently collect photo-injected electrons from the anatase THPF layer thus suppressing the recombination of electrons and holes in electrolyte. The results showed that the PCE of QDSSC based on the TNAF photoanode was about 1.4-fold higher(η = 3.05%, J_(sc)= 15.86 m A cm^(-2), V_(oc)= 0.602 V, FF = 0.319) than that of device based on pure THPF(η = 2.20%, J_(sc)= 13.82 m A cm^(-2), V_(oc)= 0.572 V, FF = 0.278).
基金
financially supported by the China Postdoctoral Science Foundation(2015M572210,2016M602376)
the National Natural Science Foundation of China(61604110)
the Hubei Natural Science Foundation of China(2017CFB291)
the Foundation of Wuhan University of Science and Technology(2016XZ002)
作者简介
Corresponding author:Lei Zhao,E-mail address:zhaolei@wust.edu.cn.
