摘要
采用一甲基三氯硅烷(CH_3SiCl_3,MTS)和高纯氢气(H_2)为原料,通过化学气相沉积技术(CVD)在石墨基体表面沉积了一层碳化硅(SiC)膜。采用扫描电子显微镜(SEM)和能谱分析(EDS)对膜层断面的显微结构和元素组成进行了观察和分析,采用金相显微镜和表面粗糙度轮廓仪对膜层的表面微观形貌和表面粗糙度进行了观察和测试,采用排水法对膜层密度进行了测试。结果表明,采用密度1.88 g/cm^3、三点抗弯强度为79.30 MPa的高致密度、高强度石墨作为基体材料时,在优化的CVD工艺条件下制备的SiC膜层密度为3.193 g/cm^3,气孔率为0.50%,膜层表面粗糙度Ra=1.0157μm。
A silicon carbide (SiC) coating was deposited on the surface of graphite substrate by chemical vapor deposition (CVD) using methyltrichlorosilane (CH3SiCl3, MTS) and high-purity hydrogen (H2) as raw materials. The microstructure of the SiC coating was observed by scanning electron microscopy (SEM) and the elements composition of it was analyzed by energy spectrum analysis (EDS). The surface microstructure was observed by the metallographic microscope, the surface roughness data was obtained by the surface roughness profiler, and the density of the SiC coating was tested by the drainage method. The results show that, when using as a substrate material a high density, high strength and high uniformity graphite, for example, the granite with the density of 1.88 g/cm^3 and three-point flexural strength of 79.30 MPa, a high quality SiC coating could be prepared under an optimized process conditions, its density, porosity and surface roughness being 3.193 g/cm^3, 0.50 % and 1.0157 μm, respectively.
作者
胡传奇
黄小婷
刘海林
霍艳丽
杨泰生
唐婕
陈玉峰
HU Chuanqi;HUANG Xiaoting;LIU Hailin;HUO Yanli;YANG Taisheng;TANG Jie;CHEN.Yufeng(China Building Materials Academy Co., Ltd., Beijing 100024)
出处
《陶瓷学报》
CAS
北大核心
2019年第1期24-27,共4页
Journal of Ceramics
基金
国家重点研发计划项目:<半导体产业用大尺寸高纯陶瓷部件制造技术>子课题项目<MOCVD用C@CVD-SiC承载部件>
关键词
石墨基体
化学气相沉积
碳化硅膜
膜层质量
分析
graphite substrate
chemical vapor deposition
SiC coating
quality of coating
analysis
作者简介
通信联系人:黄小婷(1988-),女,硕士,工程师。
