摘要
氮化镓器件是宽禁带电力电子器件代表之一,近年来发展迅速,除了具有高耐压、高工作温度外,还具有高工作频率、高功率和高线性度等优势,将应用于高密度电力电子领域。本文介绍了氮化镓器件的特性、常用类型、应用领域和国内外发展现状,并总结器件的存在问题和未来的发展趋势。
As a representative of wide band gap semiconductor,gallium nitride devices have developed rapidly in recent years.Besides high pressures resistance and high working temperature,it has the advantages of high working frequency,high power and high linearity,and will be applied to the field of high density power electronics field.This article introduces the characteristics,common types,application fields and current development of Gan devices,and summarizes the existing problems and future development of the devices.
作者
孔德鑫
刘洋
王伟康
Kong Dexin;Liu Yang;Wang Weikang
出处
《变频器世界》
2018年第8期52-57,共6页
The World of Inverters
关键词
宽禁带
电力电子器件
氮化镓
Wide band gap
Power electronic device
GaN
